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71V65703S85BG

256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65703S85BGG

256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65703S85BGGI

256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65703S85BGI

256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65703S85BQ

256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65703S85BQG

256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65703S85BQGI

256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65703S85BQI

256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65703S85PFG

256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65703S85PFGI

256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT71V65703S85BG

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

IDT71V65703S85BGI

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

IDT71V65703S85BQ

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

IDT71V65703S85BQI

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

IDT71V65703S85PF

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

IDT71V65703S85PFI

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

詳細(xì)參數(shù)

  • 型號(hào):

    IDT71V65703S85PFG

  • 功能描述:

    IC SRAM 9MBIT 85NS 100TQFP

  • RoHS:

  • 類別:

    集成電路(IC) >> 存儲(chǔ)器

  • 系列:

    -

  • 標(biāo)準(zhǔn)包裝:

    72

  • 系列:

    - 格式 -

  • 存儲(chǔ)器:

    RAM

  • 存儲(chǔ)器類型:

    SRAM - 同步

  • 存儲(chǔ)容量:

    9M(256K x 36)

  • 速度:

    75ns

  • 接口:

    并聯(lián)

  • 電源電壓:

    3.135 V ~ 3.465 V

  • 工作溫度:

    -40°C ~ 85°C

  • 封裝/外殼:

    100-LQFP

  • 供應(yīng)商設(shè)備封裝:

    100-TQFP(14x14)

  • 包裝:

    托盤

  • 其它名稱:

    71V67703S75PFGI

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IDT
23+
100-TQFP(14x14)
36430
專業(yè)分銷產(chǎn)品!原裝正品!價(jià)格優(yōu)勢(shì)!
詢價(jià)
IDT
24+
QFP
66
詢價(jià)
IDT
16+
QFP
4000
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢(shì)!
詢價(jià)
IDT
23+
120
專做原裝正品,假一罰百!
詢價(jià)
IDT
22+
100TQFP
9000
原廠渠道,現(xiàn)貨配單
詢價(jià)
IDT
21+
100TQFP
13880
公司只售原裝,支持實(shí)單
詢價(jià)
IDT
23+
100TQFP
9000
原裝正品,支持實(shí)單
詢價(jià)
IDT
23+
QFP
13
現(xiàn)貨庫(kù)存
詢價(jià)
IDT
24+
QFP
6500
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
詢價(jià)
IDT
24+
100-TQFP
6243
原裝現(xiàn)貨
詢價(jià)
更多IDT71V65703S85PFG供應(yīng)商 更新時(shí)間2025-1-3 11:02:00