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IDT71V65803S100BQI

256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs

IDT

Integrated Device Technology, Inc.

71V65803S100BG

256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65803S100BGG

256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65803S100BGGI

256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65803S100BGI

256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65803S100BQ

256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65803S100BQG

256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65803S100BQI

256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65803S100PFG

256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65803S100PFGI

256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT71V65803S100BG

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

IDT71V65803S100BGI

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

IDT71V65803S100BQ

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

IDT71V65803S100PF

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

IDT71V65803S100PFI

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

詳細(xì)參數(shù)

  • 型號(hào):

    IDT71V65803S100BQI

  • 功能描述:

    IC SRAM 9MBIT 100MHZ 165FBGA

  • RoHS:

  • 類別:

    集成電路(IC) >> 存儲(chǔ)器

  • 系列:

    -

  • 標(biāo)準(zhǔn)包裝:

    72

  • 系列:

    - 格式 -

  • 存儲(chǔ)器:

    RAM

  • 存儲(chǔ)器類型:

    SRAM - 同步

  • 存儲(chǔ)容量:

    9M(256K x 36)

  • 速度:

    75ns

  • 接口:

    并聯(lián)

  • 電源電壓:

    3.135 V ~ 3.465 V

  • 工作溫度:

    -40°C ~ 85°C

  • 封裝/外殼:

    100-LQFP

  • 供應(yīng)商設(shè)備封裝:

    100-TQFP(14x14)

  • 包裝:

    托盤

  • 其它名稱:

    71V67703S75PFGI

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IDT
23+
165-CABGA(13x15)
24840
專業(yè)分銷產(chǎn)品!原裝正品!價(jià)格優(yōu)勢!
詢價(jià)
IDT
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
IDT
24+
165-FBGA
4900
原裝現(xiàn)貨
詢價(jià)
IDT
22+
165CABGA (13x15)
9000
原廠渠道,現(xiàn)貨配單
詢價(jià)
IDT
21+
165CABGA (13x15)
13880
公司只售原裝,支持實(shí)單
詢價(jià)
IDT
23+
165CABGA (13x15)
9000
原裝正品,支持實(shí)單
詢價(jià)
IDT
23+
100TQFP
9526
詢價(jià)
IDT
24+
QFP100L
654
詢價(jià)
IDT
22+
QFP100L
492
原裝現(xiàn)貨熱賣中,提供一站式真芯服務(wù)
詢價(jià)
IDT
2339+
QFP100L
5825
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢庫存!
詢價(jià)
更多IDT71V65803S100BQI供應(yīng)商 更新時(shí)間2025-1-1 16:30:00