首頁(yè) >IDT71V65803S100PF>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IDT71V65803S100PF | 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs | IDT Integrated Device Technology, Inc. | IDT | |
IDT71V65803S100PF | 包裝:卷帶(TR) 封裝/外殼:100-LQFP 類別:集成電路(IC) 存儲(chǔ)器 描述:IC SRAM 9MBIT PARALLEL 100TQFP | Renesas Electronics America Inc Renesas Electronics America Inc | Renesas Electronics America Inc | |
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs | IDT Integrated Device Technology, Inc. | IDT | ||
包裝:卷帶(TR) 封裝/外殼:100-LQFP 類別:集成電路(IC) 存儲(chǔ)器 描述:IC SRAM 9MBIT PARALLEL 100TQFP | Renesas Electronics America Inc Renesas Electronics America Inc | Renesas Electronics America Inc | ||
包裝:卷帶(TR) 封裝/外殼:100-LQFP 類別:集成電路(IC) 存儲(chǔ)器 描述:IC SRAM 9MBIT PARALLEL 100TQFP | Renesas Electronics America Inc Renesas Electronics America Inc | Renesas Electronics America Inc | ||
256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDT Integrated Device Technology, Inc. | IDT | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDT Integrated Device Technology, Inc. | IDT | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDT Integrated Device Technology, Inc. | IDT | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDT Integrated Device Technology, Inc. | IDT |
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
IDT71V65803S100PF
- 制造商:
Renesas Electronics America Inc
- 類別:
集成電路(IC) > 存儲(chǔ)器
- 包裝:
卷帶(TR)
- 存儲(chǔ)器類型:
易失
- 存儲(chǔ)器格式:
SRAM
- 技術(shù):
SRAM - 同步,SDR(ZBT)
- 存儲(chǔ)容量:
9Mb(512K x 18)
- 存儲(chǔ)器接口:
并聯(lián)
- 電壓 - 供電:
3.135V ~ 3.465V
- 工作溫度:
0°C ~ 70°C(TA)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
100-LQFP
- 供應(yīng)商器件封裝:
100-TQFP(14x14)
- 描述:
IC SRAM 9MBIT PARALLEL 100TQFP
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IDT |
23+ |
100TQFP |
9526 |
詢價(jià) | |||
IDT |
24+ |
QFP100L |
654 |
詢價(jià) | |||
IDT |
22+ |
QFP100L |
492 |
原裝現(xiàn)貨熱賣中,提供一站式真芯服務(wù) |
詢價(jià) | ||
IDT |
2339+ |
QFP100L |
5825 |
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存! |
詢價(jià) | ||
IDT |
23+ |
100-TQFP(14x14) |
39257 |
專業(yè)分銷產(chǎn)品!原裝正品!價(jià)格優(yōu)勢(shì)! |
詢價(jià) | ||
IDT |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
IDT, Integrated Device Technol |
24+ |
100-TQFP(14x14) |
56200 |
一級(jí)代理/放心采購(gòu) |
詢價(jià) | ||
IDT |
20+ |
QFP-100 |
1001 |
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件! |
詢價(jià) | ||
IDT |
22+ |
100TQFP |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
IDT |
21+ |
100TQFP |
13880 |
公司只售原裝,支持實(shí)單 |
詢價(jià) |
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