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71V65903S80BG

256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65903S80BGI

256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65903S80BQ

256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65903S80BQG

256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65903S80PFG

256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65903S80PFGI

256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT71V65903S80BG

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

IDT71V65903S80BGI

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

IDT71V65903S80BQ

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

IDT71V65903S80BQI

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

詳細(xì)參數(shù)

  • 型號(hào)：

    IDT71V65903S80PFGI

  • 功能描述：

    IC SRAM 9MBIT 80NS 100TQFP

  • RoHS：

    是

  • 類別：

    集成電路(IC) >> 存儲(chǔ)器

  • 系列：

    -

  • 標(biāo)準(zhǔn)包裝：

    72

  • 系列：

    - 格式 -

  • 存儲(chǔ)器：

    RAM

  • 存儲(chǔ)器類型：

    SRAM - 同步

  • 存儲(chǔ)容量：

    9M（256K x 36）

  • 速度：

    75ns

  • 接口：

    并聯(lián)

  • 電源電壓：

    3.135 V ~ 3.465 V

  • 工作溫度：

    -40°C ~ 85°C

  • 封裝/外殼：

    100-LQFP

  • 供應(yīng)商設(shè)備封裝：

    100-TQFP（14x14）

  • 包裝：

    托盤

  • 其它名稱：

    71V67703S75PFGI

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IDT
23+
100-TQFP(14x14)
73390
專業(yè)分銷產(chǎn)品!原裝正品!價(jià)格優(yōu)勢!
 詢價(jià)
IDT
24+
100-TQFP
6200
原裝現(xiàn)貨
 詢價(jià)
IDT
22+
100TQFP
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
IDT
21+
100TQFP
13880
公司只售原裝,支持實(shí)單
 詢價(jià)
IDT
23+
100TQFP
9000
原裝正品，支持實(shí)單
 詢價(jià)
IDT
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IDT, Integrated Device Technol
24+
100-TQFP(14x14)
56200
一級(jí)代理/放心采購
 詢價(jià)
IDT
20+
QFP-100
1001
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
IDT, Integrated Device Techno
23+
100-TQFP14x14
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IDT, Integrated Device Techno
23+
100-TQFP14x14
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
更多IDT71V65903S80PFGI供應(yīng)商 更新時(shí)間2025-3-5 16:30:00

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