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IRFP140

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP140

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforapplicationsuchasswitchingregulators,switchingconvertors,motordriversandsoon. FEATURES ?DrainCurrent–ID=31A@TC=25℃ ?DrainSourceVoltage- :VDSS=100V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.077Ω(Max) ?SOAispowerdissipati

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFP140

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP140

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Isolatedcentralmountinghole ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Not

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP140A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.041Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFP140A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFP140N

PowerMOSFET(Vdss=100V,Rds(on)=0,052ohm,Id=33A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFP140N

33A,100V,0.040Ohm,N-ChannelPowerMOSFET

Features ?UltraLowOn-Resistance -rDS(ON)=0.040?,VGS=10V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER?ElectricalModels -SpiceandSABER?ThermalImpedanceModels -www.intersil.com ?PeakCurrentvsPulseWidthCurve ?UISRatingCurve

Intersil

Intersil Corporation

IRFP140N

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFP140NPBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    IF140

  • 制造商：

    INTERFET

  • 制造商全稱：

    INTERFET

  • 功能描述：

    N-Channel Silicon Junction Field-Effect Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IF
24+
原廠封裝
5000
原裝現(xiàn)貨假一罰十
 詢價(jià)
SIGNAL
DIP
6688
15
現(xiàn)貨庫(kù)存
 詢價(jià)
LGINNOTEK
2022+
1120
全新原裝 貨期兩周
 詢價(jià)
LGINNOTEK
NA
8560
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨
 詢價(jià)
EVISUN(易成)
24+
con
10000
查現(xiàn)貨到京北通宇商城
 詢價(jià)
EVISUN(易成)
24+
con
2500
優(yōu)勢(shì)庫(kù)存,原裝正品
 詢價(jià)
MORNSUN
23+
2000
金升陽(yáng)代理
 詢價(jià)
MORNSUN金升陽(yáng)
24+
SIP
12500
金升陽(yáng)電源模塊全系列在售
 詢價(jià)
金升陽(yáng)
900
詢價(jià)
MORNSUN(金升陽(yáng))
2024+
插件
500000
誠(chéng)信服務(wù),絕對(duì)原裝原盤(pán)
 詢價(jià)
更多IF140供應(yīng)商 更新時(shí)間2025-4-12 13:30:00

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