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IRFP140

31A, 100V, 0.077 Ohm, N-Channel Power MOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFP140

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredfor commercial-industrialapplicationswherehigherpowerlevelspreclud

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP140

iscN-Channel MOSFET Transistor

DESCRIPTION ?Designedforapplicationsuchasswitchingregulators,switchingconvertors,motordriversandsoon. FEATURES ?DrainCurrent–ID=31A@TC=25℃ ?DrainSourceVoltage- :VDSS=100V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.077Ω(Max) ?SOAispowerdissipati

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP140

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Isolatedcentralmountinghole ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Not

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP140

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP140

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP140_V02

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Isolatedcentralmountinghole ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Not

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP1405

AUTOMOTIVE MOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp

IRF

International Rectifier

IRFP140A

Advanced Power MOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.041Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFP140N

Power MOSFET(Vdss=100V, Rds(on)=0,052ohm, Id=33A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號:

    IRFP140

  • 功能描述:

    MOSFET N-Chan 100V 31 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IR
21+
TO-247
6000
原裝正品
詢價(jià)
IR
24+
TO 3P
160915
明嘉萊只做原裝正品現(xiàn)貨
詢價(jià)
IR
23+
TO-247
35890
詢價(jià)
24+
1100
詢價(jià)
IR
06+
TO-247
800
全新原裝 絕對有貨
詢價(jià)
IR
15+
TO-247
11560
全新原裝,現(xiàn)貨庫存,長期供應(yīng)
詢價(jià)
IR
24+
原廠封裝
300
原裝現(xiàn)貨假一罰十
詢價(jià)
IR
17+
TO-247
6200
100%原裝正品現(xiàn)貨
詢價(jià)
IR
23+
TO-3P
5000
原裝正品,假一罰十
詢價(jià)
INF
2020+
TO-247
208
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
詢價(jià)
更多IRFP140供應(yīng)商 更新時(shí)間2025-1-21 11:18:00