首頁(yè) >IGW40N65F5>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IGW40N65F5 | High speed 5 FAST IGBT in TRENCHSTOP 5 technology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
High speed switching series fifth generation | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
包裝:管件 封裝/外殼:TO-247-3 類(lèi)別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 650V TO247-3 | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
包裝:管件 封裝/外殼:TO-247-3 類(lèi)別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 650V 74A TO247-3 | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HighspeedFASTIGBTinTRENCHSTOPTM5technology FeaturesandBenefits: HighspeedF5technologyoffering: ?Best-in-Classefficiencyinhardswitchingandresonant topologies ?650Vbreakdownvoltage ?LowgatechargeQG ?Maximumjunctiontemperature175°C ?Dynamicallystresstested ?QualifiedaccordingtoAEC-Q101 ?Greenpackage( | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HighspeedFASTIGBTinTRENCHSTOPTM5F5technology FeaturesandBenefits: ?Best-in-Classefficiencyinhardswitchingandresonant topologies ?650Vbreakdownvoltage ?LowgatechargeQG ?Maximumjunctiontemperature175°C ?Dynamicallystresstested ?QualifiedaccordingtoAEC-Q101 ?Pb-freeleadplating;RoHScompliant ?Innovative | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HighspeedfastIGBTinTRENCHSTOPTM5technology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
650VIGBThighspeedswitchingseriesfifthgeneration | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Highspeed5FASTIGBTinTRENCHSTOP5technology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
650VDuoPackIGBTandDiodeHighspeedswitchingseriesfifthgeneration | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
650VDuoPackIGBTandDiodeHighspeedswitchingseriesfifthgeneration Highspeed5IGBTinTRENCHSTOP?5technologycopackedwithRAPID1fastandsoftantiparalleldiode FeaturesandBenefits: HighspeedH5technologyoffering ?Best-in-Classefficiencyinhardswitchingandresonant topologies ?650Vbreakdownvoltage ?LowQG ?IGBTcopackedwithRAPID | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
650VDuoPackIGBTandDiodeHighspeedswitchingseriesfifthgeneration Highspeed5IGBTinTRENCHSTOP?5technologycopackedwithRAPID1fastandsoftantiparalleldiode FeaturesandBenefits: HighspeedH5technologyoffering ?Best-in-Classefficiencyinhardswitchingandresonant topologies ?650Vbreakdownvoltage ?LowQG ?IGBTcopackedwithRAPID | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
650VDuoPackIGBTandDiodeHighspeedswitchingseriesfifthgeneration | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
IGBTcopackedwithRAPID1fastandsoftantiparalleldiode | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
詳細(xì)參數(shù)
- 型號(hào):
IGW40N65F5
- 功能描述:
IGBT 晶體管 ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
- RoHS:
否
- 制造商:
Fairchild Semiconductor
- 配置:
集電極—發(fā)射極最大電壓
- VCEO:
650 V
- 集電極—射極飽和電壓:
2.3 V
- 柵極/發(fā)射極最大電壓:
20 V 在25
- C的連續(xù)集電極電流:
150 A
- 柵極—射極漏泄電流:
400 nA
- 功率耗散:
187 W
- 封裝/箱體:
TO-247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Infineon(英飛凌) |
23+ |
TO-247 |
928 |
原廠訂貨渠道,支持BOM配單一站式服務(wù) |
詢價(jià) | ||
Infineon |
18+ |
NA |
3393 |
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng) |
詢價(jià) | ||
Infineon(英飛凌) |
2112+ |
PG-TO247-3 |
115000 |
240個(gè)/管一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期 |
詢價(jià) | ||
INFINEON/英飛凌 |
23+ |
TO-247 |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
INFINEON/英飛凌 |
21+ |
NA |
12820 |
只做原裝,質(zhì)量保證 |
詢價(jià) | ||
INFINEON |
22+ |
TO-247 |
6000 |
十年配單,只做原裝 |
詢價(jià) | ||
INFINEON/英飛凌 |
21+ |
TO-3P |
5590 |
只做原裝正品假一賠十!正規(guī)渠道訂貨! |
詢價(jià) | ||
INFINEON/英飛凌 |
NA |
8600 |
原裝正品,歡迎來(lái)電咨詢! |
詢價(jià) | |||
INFINEON/英飛凌 |
22+ |
N/A |
10690 |
現(xiàn)貨,原廠原裝假一罰十! |
詢價(jià) | ||
INFINEON/英飛凌 |
23+ |
TO-3P |
6000 |
原裝正品,支持實(shí)單 |
詢價(jià) |
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