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IIPD65R600E6

N-Channel MOSFET Transistor

?DESCRITION ?Fastswitching ?Veryhighcommutationruggedness ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IIPP65R600E6

N-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPA65R600E6

650VCoolMOSE6PowerTransistor

Description CoolMOSTMisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSTMDEseriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresultin

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA65R600E6

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPA65R600E6

MetallOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD65R600E6

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?Veryhighcommutationruggedness ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPD65R600E6

MetallOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD65R600E6

650VCoolMOSE6PowerTransistor

Description CoolMOSTMisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSTMDEseriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresultin

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP65R600E6

N-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPP65R600E6

MetallOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP65R600E6

650VCoolMOSE6PowerTransistor

Description CoolMOSTMisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSTMDEseriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresultin

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPS65R600E6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
N/A
2023+
SOP8
50000
全新原裝現(xiàn)貨
 詢價(jià)
IR
22+
DIP
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
DIP
8000
只做原裝現(xiàn)貨
 詢價(jià)
IR
23+
DIP
7000
詢價(jià)
IOR
23+24
SIP
9860
原廠原包裝。終端BOM表可配單。可開13%增值稅
 詢價(jià)
INFINEON
24+
con
100
現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價(jià)格https://www.jbchip.com/index
 詢價(jià)
VISHAY
12+
TO-252
15000
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
 詢價(jià)
VISHAY/威世
21+
TO-252
30000
只做正品原裝現(xiàn)貨
 詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
ifm electronic
7162+
con
5
現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價(jià)格
 詢價(jià)
更多IIPD65R600E6供應(yīng)商 更新時(shí)間2024-11-16 10:38:00

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