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IRFL110TR

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?SurfaceMount ?AvailableinTapeandReel ?DynamicdV/dtRating ?Repetitive

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFL110TRPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?SurfaceMount ?AvailableinTapeandReel ?DynamicdV/dtRating ?Repetitive

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFL110TRPBF

N-Channel100-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFETs ?175°CMaximumJunctionTemperature ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

IRFL110TRPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFM110A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.289Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFQ110

QUADN-CHANNELENHANCEMENTMOSFETS

SEME-LAB

Seme LAB

IRFR110

4.7A,100V,0.540Ohm,N-ChannelPowerMOSFETs

4.7A,100V,0.540Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseadvancedpowerMOSFETsaredesignedforuse

Intersil

Intersil Corporation

IRFR110

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Power

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR110

DynamicdV/dtRatingRepetitiveAvalancheRated

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR110

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
ROHM
24+
SOT-163SOT-23-6
11790
新進(jìn)庫存/原裝
 詢價(jià)
ROHM
17+
SOT-23-5
6200
100%原裝正品現(xiàn)貨
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ROHM
16+
SOT-23-5
10000
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢!
 詢價(jià)
ROHM
24+
SOT-163
3000
原裝現(xiàn)貨假一罰十
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ROHM
23+
SOT23-6
9365
價(jià)格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
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ROHM
24+
SOT-163
2560
絕對原裝!現(xiàn)貨熱賣!
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SOT-163
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
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ROHM
1844+
SOT-457
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
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ROHM
24+
BGA
20000
全新原廠原裝，進(jìn)口正品現(xiàn)貨，正規(guī)渠道可含稅??！
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ROHM
24+
SOT23
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
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更多IMB-110供應(yīng)商 更新時(shí)間2025-4-26 16:30:00

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