首頁(yè) >IMC-450-MM-US>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IMC-450-MM-US | 包裝:散裝 類(lèi)別:網(wǎng)絡(luò)解決方案 媒體轉(zhuǎn)換器 描述:CONV MCBASIC TX/FX-MM1300-SC | Advantech Corp Advantech Corp | Advantech Corp | |
IMC-450-MM-US | 包裝:散裝 類(lèi)別:網(wǎng)絡(luò)解決方案 媒體轉(zhuǎn)換器 描述:CONV MCBASIC TX/FX-MM1300-SC | Advantech Corp Advantech Corp | Advantech Corp | |
包裝:散裝 類(lèi)別:網(wǎng)絡(luò)解決方案 媒體轉(zhuǎn)換器 描述:MCBASIC TX/SX | Advantech Corp Advantech Corp | Advantech Corp | ||
TRANSISTORSN-CHANNEL(Vdss=500V,Rds(on)=0.400ohm,Id=12A) TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddio | IRF International Rectifier | IRF | ||
13A,500V,0.400Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | Intersil Intersil Corporation | Intersil | ||
13A,500V,0.400Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
N-CHANNELPOWERMOSFETS FEATURES ?LowRds(on))athighvoltage ?ImprovedInductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolysillcongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Highv | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
N-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ?13A,500V ?RDS(on)=0.4Ω ?SOAisPowerDissipationLimited ?LinearTransferCharacteristics ?RelatedLiterature APPLICATIONS ?Designedforapplicationssuchasswitchingregulators, switchingconvertors,motordrivers,relaydriver,anddrivers forhighpowerbipola | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelPowerMOSFET DESCRIPTION Theyaredesignedforuseinapplicationssuchasswitchedmodepowersupplies,DCtoDCconverters,motorcontrol,circuitsUPSandgeneralpurposeswitchingapplications. TheNellIRF450isathree-terminalsilicondevicewithcurrentconductioncapabilityof14A,fastswitchingsp | NELLSEMINell Semiconductor Co., Ltd 尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司 | NELLSEMI | ||
N-CHANNEPOWERMOSFETS FEATURES ?LowRds(on))athighvoltage ?ImprovedInductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolysillcongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Highv | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
HIGHVOLTAGEPOWERMOSFETDIE | IXYS IXYS Corporation | IXYS | ||
N-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
POWERMOSFETTHRU-HOLE(TO-254AA) HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance. Features: ■SimpleDriveRequirements ■EaseofParalleling ■HermeticallySeale | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
POWERMOSFETTHRU-HOLE(TablessTO-254AA) | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
POWERMOSFETN-CHANNEL(BVdss=500V,Rds(on)=0.415ohm,Id=12A) RDS(on)0.415? ID12A HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establ | IRF International Rectifier | IRF | ||
POWERMOSFETSURFACEMOUNT(SMD-1) RDS(on)0.415? ID12A HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establ | IRF International Rectifier | IRF |
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
IMC-450-MM-US
- 制造商:
Advantech Corp
- 類(lèi)別:
網(wǎng)絡(luò)解決方案 > 媒體轉(zhuǎn)換器
- 系列:
McBasic
- 包裝:
散裝
- 配置:
固定
- 銅類(lèi)型:
10/100
- 光纖端口:
1
- 光纖類(lèi)型:
100BASE-FX(多模)
- 距離:
5km
- 電壓 - 輸入:
100 ~ 240VAC
- 連接器類(lèi)型:
RJ45,SC
- 安裝類(lèi)型:
底座安裝
- 工作溫度:
0°C ~ 50°C
- 描述:
CONV MCBASIC TX/FX-MM1300-SC
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
INTEL |
23+ |
PLCC |
1050 |
專(zhuān)業(yè)優(yōu)勢(shì)供應(yīng) |
詢(xún)價(jià) | ||
INTEL |
2023+環(huán)?,F(xiàn)貨 |
PLCC |
50 |
專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)等方案配套一站式服務(wù) |
詢(xún)價(jià) | ||
SAMSUNG |
23+ |
SAMSUNG |
28520 |
原廠授權(quán)代理分銷(xiāo)現(xiàn)貨只做原裝正邁科技樣品支持現(xiàn)貨 |
詢(xún)價(jià) | ||
IMC |
22+ |
QFN |
4900 |
原廠原裝,價(jià)格優(yōu)勢(shì)!13246658303 |
詢(xún)價(jià) | ||
MAX |
23+ |
SOP8 |
5000 |
原裝正品,假一罰十 |
詢(xún)價(jià) | ||
MAXIM |
19+ |
SOP8 |
256800 |
原廠代理渠道,每一顆芯片都可追溯原廠; |
詢(xún)價(jià) | ||
MAXIM/美信 |
23+ |
SOP-8 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢(xún)價(jià) | ||
MAXIM/美信 |
21+ |
SOP8 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢(xún)價(jià) | ||
MAXIM/美信 |
2022 |
SOP-8 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢(xún) |
詢(xún)價(jià) | ||
MAX |
23+ |
SOP-8 |
36324 |
##公司主營(yíng)品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢(xún)價(jià) |
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