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IMZA120R014M1H中文資料英飛凌數(shù)據(jù)手冊PDF規(guī)格書
| 廠商型號 |
IMZA120R014M1H |
| 功能描述 | CoolSiC??1200 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology |
| 絲印標(biāo)識 | |
| 封裝外殼 | PG-TO247-4-STD-T3.7 |
| 文件大小 |
1.34728 Mbytes |
| 頁面數(shù)量 |
17 頁 |
| 生產(chǎn)廠商 | Infineon Technologies AG |
| 企業(yè)簡稱 |
Infineon【英飛凌】 |
| 中文名稱 | 英飛凌科技股份公司官網(wǎng) |
| 原廠標(biāo)識 |  |
| 數(shù)據(jù)手冊 | |
| 更新時間 | 2025-2-4 17:22:00 |
IMZA120R014M1H規(guī)格書詳情
Features
? VDSS = 1200 V at Tvj = 25°C
? IDCC = 127 A at Tvj = 25°C
? RDS(on) = 14 mΩ at VGS = 18 V, Tvj = 25°C
? Very low switching losses
? Short circuit withstand time 3 μs
? Benchmark gate threshold voltage, VGS(th) = 4.2 V
? Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
? Robust body diode for hard commutation
? .XT interconnection technology for best-in-class thermal performance
Potential applications
? General purpose drives (GPD)
? EV-Charging
? Online UPS/Industrial UP
? String inverters
? Solar power optimizer
Product validation
? Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
2021-
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
INFINEON |
22+ |
NA |
1206 |
原裝正品支持實單 |
詢價 | ||
Infineon/英飛凌 |
23+ |
PG-TO247-4-3 |
25630 |
原裝正品 |
詢價 | ||
Infineon/英飛凌 |
21+ |
PG-TO247-4-3 |
6000 |
原裝現(xiàn)貨正品 |
詢價 | ||
Infineon/英飛凌 |
21+ |
PG-TO247-4-3 |
6820 |
只做原裝,質(zhì)量保證 |
詢價 | ||
Infineon(英飛凌) |
2112+ |
PG-TO247-4-3 |
115000 |
240個/管一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期 |
詢價 | ||
INFINEON |
2023 |
NA |
3975 |
原廠代理渠道,正品保障 |
詢價 | ||
INFINEON |
24+ |
con |
10000 |
查現(xiàn)貨到京北通宇商城 |
詢價 | ||
Infineon/英飛凌 |
2022+ |
PG-TO247-4-3 |
48000 |
只做原裝,絕對原裝,假一罰十 |
詢價 | ||
Infineon/英飛凌 |
23+ |
PG-TO247-4-3 |
6000 |
我們只做原裝正品,支持檢測。 |
詢價 | ||
Infineon/英飛凌 |
PG-TO247-4-3 |
6000 |
詢價 |
