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IMZC120R026M2H中文資料英飛凌數(shù)據(jù)手冊PDF規(guī)格書

IMZC120R026M2H
廠商型號

IMZC120R026M2H

功能描述

CoolSiC? 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology

絲印標(biāo)識

12M2H026

封裝外殼

PG-TO247-4-U07

文件大小

1.36869 Mbytes

頁面數(shù)量

17

生產(chǎn)廠商 Infineon Technologies AG
企業(yè)簡稱

Infineon英飛凌

中文名稱

英飛凌科技股份公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-26 21:21:00

IMZC120R026M2H規(guī)格書詳情

Features

? VDSS = 1200 V at Tvj = 25°C

? IDDC = 49 A at TC = 100°C

? RDS(on) = 25 mΩ at VGS = 18 V, Tvj = 25°C

? Very low switching losses

? Overload operation up to Tvj = 200°C

? Short circuit withstand time 2 μs

? Benchmark gate threshold voltage, VGS(th) = 4.2 V

? Robust against parasitic turn on, 0 V turn-off gate voltage can be applied

? Robust body diode for hard commutation

? .XT interconnection technology for best-in-class thermal performance

? Suitable Infineon gate drivers can be found under https://www.infineon.com/gdfinder

Potential applications

? General purpose drives (GPD)

? EV Charging

? Online UPS/Industrial UPS

? Solar power optimizer

? String inverter

? Energy Storage Systems (ESS)

? Welding

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