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IMZC120R026M2H

Marking：12M2H026；Package：PG-TO247-4-U07；CoolSiC? 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology

Features ?VDSS=1200VatTvj=25°C ?IDDC=49AatTC=100°C ?RDS(on)=25mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasit

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMZC120R026M2H

CoolSiC? 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology

Features ?VDSS=1200VatTvj=25°C ?IDDC=49AatTC=100°C ?RDS(on)=25mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasit

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMZC120R026M2H

CoolSiC? 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology

Features ?VDSS=1200VatTvj=25°C ?IDDC=49AatTC=100°C ?RDS(on)=25mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasit

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMZC120R026M2H

CoolSiC? 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology

Features ?VDSS=1200VatTvj=25°C ?IDDC=49AatTC=100°C ?RDS(on)=25mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasit

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMZC120R026M2H

CoolSiC? 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology

Features ?VDSS=1200VatTvj=25°C ?IDDC=49AatTC=100°C ?RDS(on)=25mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasit

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMBG120R026M2H

CoolSiC?1200VSiCMOSFETG2:SiliconCarbideMOSFET

Features ?VDSS=1200VatTvj=25°C ?IDDC=53AatTC=100°C ?RDS(on)=25.4mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparas

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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05+
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1742
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更多IMZC120R026M2H供應商 更新時間2025-1-26 16:30:00

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