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IRFN140

POWERMOSFETN-CHANNEL(BVdss=100V,Rds(on)=0.077ohm,Id=28A)

RDS(on)0.077? ID28A HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establi

IRF

International Rectifier

IRFN140

SimpleDriveRequirements

IRF

International Rectifier

IRFN140SMD

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFP140

31A,100V,0.077Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFP140

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredfor commercial-industrialapplicationswherehigherpowerlevelspreclud

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP140

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP140

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforapplicationsuchasswitchingregulators,switchingconvertors,motordriversandsoon. FEATURES ?DrainCurrent–ID=31A@TC=25℃ ?DrainSourceVoltage- :VDSS=100V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.077Ω(Max) ?SOAispowerdissipati

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFP140

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP140

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Isolatedcentralmountinghole ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Not

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP140A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.041Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào):

    IP140M

  • 制造商:

    SEME-LAB

  • 制造商全稱(chēng):

    Seme LAB

  • 功能描述:

    POSITIVE FIXED VOLTAGE REGULATOR

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IR
22+
6000
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IR
23+
8000
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IR
23+
8000
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IR
23+
7000
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PRX
23+
MODULE
10000
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ST-Erics
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QFP
85600
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IPS
24+
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153
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IPS
專(zhuān)業(yè)鐵帽
TO-3
67500
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IP
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120
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6528
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更多IP140M供應(yīng)商 更新時(shí)間2025-4-17 14:00:00