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ISPP17N80C3

N-ChannelMOSFETTransistor

?DESCRIPTION ?Highpeakcurrentcapability ?Ultralowgatecharge ?Ultraloweffectivecapacitances ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.29? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

ISPW17N80C3

iscN-ChannelMOSFETTransistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤290m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SPA17N80C3

CoolMOS??PowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA17N80C3

iscN-ChannelMOSFETTransistor

?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.29? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Idealforhigh-frequencyswitchingandsynchronousre

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SPA17N80C3

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?PG-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) ?Pb

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB17N80C3

CoolMOS?PowerTransistorFeaturesnewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB17N80C3

CoolMOS?PowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB17N80C3

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SPB17N80C3

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?PG-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) ?Pb

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP17N80C3

CoolMOS??PowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP17N80C3

N-ChannelMOSFETTransistor

?DESCRIPTION ?Highpeakcurrentcapability ?Ultralowgatecharge ?Ultraloweffectivecapacitances ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.29? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SPP17N80C3

NewrevolutionaryhighvoltagetechnologyWorldwidebestRDS(on)inTO220Ultralowgatecharge

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP17N80C3

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?PG-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) ?Pb

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP17N80C3

CoolMOSPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPW17N80C3

CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnologyExtremedv/dtrated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPW17N80C3

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO247 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPW17N80C3

CoolMOSTMPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPW17N80C3

CoolMOSPowerTransistor

Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor:

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPW17N80C3

iscN-ChannelMOSFETTransistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤290m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SPW17N80C3A

CoolMOSPowerTransistor

Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor:

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INFINEON/英飛凌
23+
TO-220F
10000
公司只做原裝正品
詢價(jià)
Infineon/英飛凌
22+
TO-220F
6000
十年配單,只做原裝
詢價(jià)
Infineon/英飛凌
23+
TO-220F
6000
原裝正品,支持實(shí)單
詢價(jià)
Infineon/英飛凌
22+
TO-220F
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
詢價(jià)
INFINEON
23+
TO-220F
8000
只做原裝現(xiàn)貨
詢價(jià)
INFINEON
23+
TO-220F
7000
詢價(jià)
INFINEON/英飛凌
22+
TO-220F
93884
詢價(jià)
INFINEON
24+
TO-TO-220F
12300
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
詢價(jià)
INFINEON/英飛凌
2022+
50
全新原裝 貨期兩周
詢價(jià)
INFINEON/英飛凌
23+
TOTO-220-FP
12300
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢價(jià)
更多IPA17N80C3供應(yīng)商 更新時(shí)間2025-1-17 14:30:00