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IPB60R199CP

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPB60R199CP

CoolMOS?PowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB60R199CP

CoolMOSPowerTransistor

Features ?Lowestfigure-of-meritRONxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: ?Hardswitchingtopologies,forServe

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB60R199CP

CoolMOSPowerTransistor

Features ?Lowestfigure-of-meritRONxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: ?Hardswitchingtopologies,forServe

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB60R199CPA

CoolMOSPowerTransistor

Features ?Lowestfigure-of-meritRonxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?AutomotiveAECQ101qualified ?Greenpackage(RoHScompliant) CoolMOSCPAisspeciallydesignedfor: ?DC/DCconvertersforAutomotiveApplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI60R199CP

iscN-ChannelMOSFETTransistor

?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.199? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPI60R199CP

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI60R199CP

CoolMOS?PowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI60R199CP

CoolMOSPowerTransistor

Features ?Lowestfigure-of-meritRONxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: ?Hardswitchingtopologies,forServe

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPL60R199CP

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPL60R199CP

600VCoolMOSCPPowerTransistor

Description TheCoolMOS?CPseriesoffersdeviceswhichprovideallbenefitsofafastswitchingSJMOSFETwhilenotsacrificingeaseofuse.Extremelylowswitchingandconductionlossesmakeswitchingapplicationsevenmoreefficient,morecompact,lighter,andcooler. Features ?Reducedboar

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R199CP

CoolMOS?PowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R199CP

N-ChannelMOSFETTransistor

?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.199? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPP60R199CP

CoolMOSPowerTransistor

Features ?Lowestfigure-of-meritRONxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: ?Hardswitchingtopologies,forServe

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R199CP

CoolMOS?PowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW60R199CP

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW60R199CP

CoolMOSPowerTransistor

Features ?Lowestfigure-of-meritRONxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDECfortargetapplications ?Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: ?Hardswitchingtopologies,forServer

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW60R199CP

N-ChannelMOSFETTransistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤199m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPW60R199CP

CoolMOS?PowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

MMUB60R199PC

600V0.199(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
INFINEON/英飛凌
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
INFINEON/英飛凌
2022
TO-220
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價(jià)
INFINEON/英飛凌
23+
TO-220
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
INFINEON/英飛凌
23+
TO-220
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
INFINEON/英飛凌
23+
TO-220
7000
詢價(jià)
Infineon
1931+
N/A
493
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詢價(jià)
INFINEON
1809+
TO-220
1675
就找我吧!--邀您體驗(yàn)愉快問購元件!
詢價(jià)
INFINEON
22+
N/A
51800
優(yōu)勢(shì)價(jià)格原裝現(xiàn)貨提供BOM一站式配單服務(wù)
詢價(jià)
Infineon
22+
NA
500
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詢價(jià)
Infineon Technologies
22+
TO2203
9000
原廠渠道,現(xiàn)貨配單
詢價(jià)
更多IPA60R199CPIC供應(yīng)商 更新時(shí)間2024-11-16 10:59:00