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IPB110N06L

OptiMOS? Power-Transistor

Features ?Forfastswitchingconvertersandsync.rectification ?N-channelenhancement-logiclevel ?175°Coperatingtemperature ?Avalancherated ?Pb-freeleadplating,RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB110N06LG

OptiMOS? Power-Transistor

Features ?Forfastswitchingconvertersandsync.rectification ?N-channelenhancement-logiclevel ?175°Coperatingtemperature ?Avalancherated ?Pb-freeleadplating,RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB110N06L-G

OptiMOS? Power-Transistor

Features ?Forfastswitchingconvertersandsync.rectification ?N-channelenhancement-logiclevel ?175°Coperatingtemperature ?Avalancherated ?Pb-freeleadplating,RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

110N06L

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

HLDG110N06

N-ChannelEnhancementModePowerMOSFET

HUILIDAShenzhen hui lida electronic co., LTD

匯利達(dá)廣東匯利達(dá)半導(dǎo)體有限公司

HLDG110N06

N-ChannelEnhancementModePowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

HY110N06T

55V/110AN-ChannelEnhancementModeMOSFET

55V,RDS(ON)=5.5mW@VGS=10V,ID=30A Features ?LowOn-StateResistance ?ExcellentGateChargexRDS(ON)Product(FOM) ?FullyCharacterizedAvalancheVoltageandCurrent ?SpeciallyDesigenedforDC-DCConverter,Off-lineUPS,AutomotiveSystem,SolenoidandMotorControl ?I

HY

HY ELECTRONIC CORP.

IPP110N06L

OptiMOS?Power-Transistor

Features ?Forfastswitchingconvertersandsync.rectification ?N-channelenhancement-logiclevel ?175°Coperatingtemperature ?Avalancherated ?Pb-freeleadplating,RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP110N06LG

OptiMOS?Power-Transistor

Features ?Forfastswitchingconvertersandsync.rectification ?N-channelenhancement-logiclevel ?175°Coperatingtemperature ?Avalancherated ?Pb-freeleadplating,RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP110N06L-G

OptiMOS?Power-Transistor

Features ?Forfastswitchingconvertersandsync.rectification ?N-channelenhancement-logiclevel ?175°Coperatingtemperature ?Avalancherated ?Pb-freeleadplating,RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號:

    IPB110N06L

  • 功能描述:

    MOSFET N-CH 60V 78A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON/英飛凌
23+
TO-263
10000
公司只做原裝正品
詢價
Infineon
22+
TO-263
6000
十年配單,只做原裝
詢價
INFINEON/英飛凌
23+
TO-263
43000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
Infineon
23+
TO-263
6000
原裝正品,支持實單
詢價
Infineon
22+
TO-263
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
詢價
INFINEON
23+
TO-263
8000
只做原裝現(xiàn)貨
詢價
INFINEON
23+
TO-263
7000
詢價
INFINEON/英飛凌
22+
TO-263
90198
詢價
INFINEON
24+
TO-263
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
詢價
INFINEON
24+
D2PAK(TO-263)
8866
詢價
更多IPB110N06L供應(yīng)商 更新時間2025-2-2 10:06:00