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IPB110N06LG

OptiMOS? Power-Transistor

Features ?Forfastswitchingconvertersandsync.rectification ?N-channelenhancement-logiclevel ?175°Coperatingtemperature ?Avalancherated ?Pb-freeleadplating,RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

110N06L

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

HLDG110N06

N-ChannelEnhancementModePowerMOSFET

HUILIDAShenzhen hui lida electronic co., LTD

匯利達(dá)廣東匯利達(dá)半導(dǎo)體有限公司

HLDG110N06

N-ChannelEnhancementModePowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

HY110N06T

55V/110AN-ChannelEnhancementModeMOSFET

55V,RDS(ON)=5.5mW@VGS=10V,ID=30A Features ?LowOn-StateResistance ?ExcellentGateChargexRDS(ON)Product(FOM) ?FullyCharacterizedAvalancheVoltageandCurrent ?SpeciallyDesigenedforDC-DCConverter,Off-lineUPS,AutomotiveSystem,SolenoidandMotorControl ?I

HY

HY ELECTRONIC CORP.

IPB110N06L

OptiMOS?Power-Transistor

Features ?Forfastswitchingconvertersandsync.rectification ?N-channelenhancement-logiclevel ?175°Coperatingtemperature ?Avalancherated ?Pb-freeleadplating,RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP110N06L

OptiMOS?Power-Transistor

Features ?Forfastswitchingconvertersandsync.rectification ?N-channelenhancement-logiclevel ?175°Coperatingtemperature ?Avalancherated ?Pb-freeleadplating,RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP110N06LG

OptiMOS?Power-Transistor

Features ?Forfastswitchingconvertersandsync.rectification ?N-channelenhancement-logiclevel ?175°Coperatingtemperature ?Avalancherated ?Pb-freeleadplating,RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP110N06L-G

OptiMOS?Power-Transistor

Features ?Forfastswitchingconvertersandsync.rectification ?N-channelenhancement-logiclevel ?175°Coperatingtemperature ?Avalancherated ?Pb-freeleadplating,RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IXFK110N06

HiPerFETPowerMOSFETs

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?JEDECTO-264AA,epoxymeet UL94V-0,flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching

IXYS

IXYS Corporation

IXFK110N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=110A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

TSM110N06

55VN-ChannelPowerMOSFET

TSCTaiwan Semiconductor Company, Ltd

臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號：

    IPB110N06LG

  • 制造商：

    Infineon Technologies AG

  • 功能描述：

    Trans MOSFET N-CH 60V 78A 3-Pin(2+Tab) TO-263

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
INFINEON/英飛凌
17+
D2PAK(TO-263)
31518
原裝正品 可含稅交易
 詢價(jià)
INFINEON
24+
D2PAK(TO-263)
8866
詢價(jià)
INFINEON
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
INFINE0N
23+
TO-263
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價(jià)
INFINEON
24+
TO-263
90000
一級代理商進(jìn)口原裝現(xiàn)貨、價(jià)格合理
 詢價(jià)
INFINEON
2023+
D2PAK(TO
80000
一級代理/分銷渠道價(jià)格優(yōu)勢 十年芯程一路只做原裝正品
 詢價(jià)
JINGDAO/晶導(dǎo)微
23+
SOD-123
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢價(jià)
INFINEON
1503+
TO263-3
3000
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
INFINEON/英飛凌
23+
TO-263
10000
公司只做原裝正品
 詢價(jià)
Infineon
22+
NA
2118
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
更多IPB110N06LG供應(yīng)商 更新時(shí)間2025-1-18 14:00:00

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