首頁 >IPB110N06LGXT>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
N-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
N-ChannelEnhancementModePowerMOSFET | HUILIDAShenzhen hui lida electronic co., LTD 匯利達(dá)廣東匯利達(dá)半導(dǎo)體有限公司 | HUILIDA | ||
N-ChannelEnhancementModePowerMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
55V/110AN-ChannelEnhancementModeMOSFET 55V,RDS(ON)=5.5mW@VGS=10V,ID=30A Features ?LowOn-StateResistance ?ExcellentGateChargexRDS(ON)Product(FOM) ?FullyCharacterizedAvalancheVoltageandCurrent ?SpeciallyDesigenedforDC-DCConverter,Off-lineUPS,AutomotiveSystem,SolenoidandMotorControl ?I | HY HY ELECTRONIC CORP. | HY | ||
OptiMOS?Power-Transistor Features ?Forfastswitchingconvertersandsync.rectification ?N-channelenhancement-logiclevel ?175°Coperatingtemperature ?Avalancherated ?Pb-freeleadplating,RoHScompliant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS?Power-Transistor Features ?Forfastswitchingconvertersandsync.rectification ?N-channelenhancement-logiclevel ?175°Coperatingtemperature ?Avalancherated ?Pb-freeleadplating,RoHScompliant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS?Power-Transistor Features ?Forfastswitchingconvertersandsync.rectification ?N-channelenhancement-logiclevel ?175°Coperatingtemperature ?Avalancherated ?Pb-freeleadplating,RoHScompliant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS?Power-Transistor Features ?Forfastswitchingconvertersandsync.rectification ?N-channelenhancement-logiclevel ?175°Coperatingtemperature ?Avalancherated ?Pb-freeleadplating,RoHScompliant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS?Power-Transistor Features ?Forfastswitchingconvertersandsync.rectification ?N-channelenhancement-logiclevel ?175°Coperatingtemperature ?Avalancherated ?Pb-freeleadplating,RoHScompliant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS?Power-Transistor Features ?Forfastswitchingconvertersandsync.rectification ?N-channelenhancement-logiclevel ?175°Coperatingtemperature ?Avalancherated ?Pb-freeleadplating,RoHScompliant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HiPerFETPowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?JEDECTO-264AA,epoxymeet UL94V-0,flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=110A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
55VN-ChannelPowerMOSFET | TSCTaiwan Semiconductor Company, Ltd 臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司 | TSC |
詳細(xì)參數(shù)
- 型號:
IPB110N06LGXT
- 制造商:
Infineon Technologies AG
- 功能描述:
Trans MOSFET N-CH 60V 78A 3-Pin(2+Tab) TO-263
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
INFINEON |
23+ |
8000 |
只做原裝現(xiàn)貨 |
詢價 | |||
INFINEON |
23+ |
7000 |
詢價 | ||||
TH/韓國太虹 |
2048+ |
TO-263 |
9851 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
英飛凌 |
21+ |
PG-TO263-3 |
6000 |
絕對原裝現(xiàn)貨 |
詢價 | ||
INFINE0N |
21+ |
D2PAK (TO-263) |
32568 |
100%進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營 |
詢價 | ||
Infineon(英飛凌) |
2112+ |
PG-TO263-3 |
115000 |
1000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨, |
詢價 | ||
Infineon/英飛凌 |
21+ |
PG-TO263-3 |
6000 |
原裝現(xiàn)貨正品 |
詢價 | ||
Infineon/英飛凌 |
21+ |
PG-TO263-3 |
10000 |
原裝,品質(zhì)保證,請來電咨詢 |
詢價 | ||
Infineon/英飛凌 |
2021+ |
PG-TO263-3 |
9600 |
原裝現(xiàn)貨,歡迎詢價 |
詢價 | ||
Infineon/英飛凌 |
2023+ |
PG-TO263-3 |
6000 |
全新原裝深圳倉庫現(xiàn)貨有單必成 |
詢價 |
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