首頁 >IPB530N15N3>規(guī)格書列表
| 零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
IPB530N15N3 | Isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
OptiMOS3 Power-Transistor Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant;HalogenFree ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitch | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=21A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=53mΩ(Max)@VGS=10V DESCRIPTION ·DC-DCConverters ·MotorDrive ·PowerSwitch | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-channel, normal level | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-channel, normal level | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
OptiMOS3Power-Transistor Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant;HalogenFree ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitch | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-channel,normallevel | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
OptiMOS3Power-Transistor Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant;HalogenFree ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitch | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-channel,normallevel | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=21A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=53mΩ(Max)@VGS=10V DESCRIPTION ·DC-DCConverters ·MotorDrive ·PowerSwitch | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-channel,normallevel | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS3Power-Transistor Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant;HalogenFree ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitch | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
詳細(xì)參數(shù)
- 型號(hào)：
IPB530N15N3
- 制造商：
Infineon Technologies AG
- 功能描述：
Trans MOSFET N-CH 150V 21A 3-Pin(2+Tab) TO-263
- 功能描述：
N-KANAL POWER MOS - Tape and Reel
- 功能描述：
MOSFET N-CH 150V 21A TO263-3
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飛凌 |
23+ |
TO263-3 |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
Infineon |
22+ |
TO263-3 |
6000 |
十年配單,只做原裝 |
詢價(jià) | ||
Infineon |
23+ |
TO263-3 |
6000 |
原裝正品，支持實(shí)單 |
詢價(jià) | ||
Infineon/英飛凌 |
23+ |
20000 |
全新、原裝、現(xiàn)貨 |
詢價(jià) | |||
INFINEON/英飛凌 |
21+ |
D2PAK(TO-263) |
10000 |
公司原裝現(xiàn)貨,歡迎咨詢 |
詢價(jià) | ||
Infineon |
22+ |
TO263-3 |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) | ||
ADI |
23+ |
D2PAK(TO-263) |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | ||
ADI |
23+ |
D2PAK(TO-263) |
7000 |
詢價(jià) | |||
INFINEON/英飛凌 |
22+ |
TO263-3 |
90201 |
詢價(jià) | |||
Infineon |
24+ |
TO263-3 |
12300 |
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證 |
詢價(jià) |
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