首頁 >IPB60R230P6>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
IPB60R230P6 | Marking:D2PAK;Package:TO-263;Isc N-Channel MOSFET Transistor ?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | |
IPB60R230P6 | Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?IncreasedMOSFETdv/dtruggedness ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhi | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
IPB60R230P6 | Material Content Data Sheet | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
Material Content Data Sheet | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor ?DESCRIPTION ?ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.23? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustde | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor ?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤230m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
IscN-ChannelMOSFETTransistor ?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplica | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?IncreasedMOSFETdv/dtruggedness ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhi | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
MetalOxideSemiconductorFieldEffectTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor ?DESCRIPTION ?ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.23? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustde | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Infineon |
1527+ |
TO-263 |
50 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
Infineon |
21+ |
TO-263 |
9866 |
詢價 | |||
INFINEON/英飛凌 |
23+ |
TO-263 |
11220 |
英飛凌優(yōu)勢原裝IC,高效BOM配單。 |
詢價 | ||
INFINEON |
23+ |
TO-263 |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
INFINEON |
23+ |
TO-263 |
7000 |
詢價 | |||
Infineon |
23+ |
TO-263 |
10000 |
原裝正品現(xiàn)貨 |
詢價 | ||
Infineon |
20+ |
原裝 |
65790 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
Infineon Technologies |
21+ |
PG-TO263-3 |
1000 |
100%進口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營)! |
詢價 | ||
Infineon |
1931+ |
N/A |
493 |
加我qq或微信,了解更多詳細信息,體驗一站式購物 |
詢價 | ||
INFINEON |
1809+ |
TO263-3 |
1675 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 |
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