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IPB60R280P6

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?IncreasedMOSFETdv/dtruggedness ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB60R280P6

Marking：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

?FEATURES ?WithTO-263(D2PAK)packaging ?Ultra-fastbodydiode ?Highspeedswitching ?Veryhighcommutationruggedness ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz ?APPLICATIONS ?Switchingapplication

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPB60R280P6

Material Content Data Sheet

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB60R280P6_15

Material Content Data Sheet

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R280P6

N-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.28? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustde

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPP60R280P6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?IncreasedMOSFETdv/dtruggedness ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R280P6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW60R280P6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?IncreasedMOSFETdv/dtruggedness ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW60R280P6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW60R280P6

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ??????? ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤280m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

供應商型號品牌批號封裝庫存備注價格
INFINEON/英飛凌
24+
SOT-263
17064
原裝進口假一罰十
 詢價
Infineon(英飛凌)
23+
TO-263
8498
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
INFINEON
23+
TO263
6800
原裝正品,支持實單
 詢價
INFINE0N
21+
PG-TO263-3
32568
100%進口原裝!長期供應!絕對優(yōu)勢價格(誠信經(jīng)營
 詢價
Infineon(英飛凌)
2447
PG-TO263-3
115000
1000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
 詢價
INFINEON/英飛凌
21+
TO263
1574
詢價
INFINEON/英飛凌
23+
PG-TO263-3
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
Infineon/英飛凌
2021+
PG-TO263-3
9600
原裝現(xiàn)貨，歡迎詢價
 詢價
Infineon/英飛凌
24+
PG-TO263-3
25000
原裝正品,假一賠十!
 詢價
Infineon/英飛凌
24+
PG-TO263-3
6000
全新原裝深圳倉庫現(xiàn)貨有單必成
 詢價
更多IPB60R280P6供應商 更新時間2025-3-25 14:04:00

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