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IPP60R280P6

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?IncreasedMOSFETdv/dtruggedness ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R280P6

N-Channel MOSFET Transistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.28? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustde

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPP60R280P6

Metal Oxide Semiconductor Field Effect Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R280P6_15

Metal Oxide Semiconductor Field Effect Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IIPP60R280P6

N-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.28? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustde

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IIPW60R280P6

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ??????? ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤280m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPA60R280P6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?IncreasedMOSFETdv/dtruggedness ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA60R280P6

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplica

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPB60R280P6

iscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-263(D2PAK)packaging ?Ultra-fastbodydiode ?Highspeedswitching ?Veryhighcommutationruggedness ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz ?APPLICATIONS ?Switchingapplication

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPB60R280P6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?IncreasedMOSFETdv/dtruggedness ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON/英飛凌
21+
TO220
20000
原裝現(xiàn)貨假一罰十
 詢價
Infineon(英飛凌)
23+
TO-220
8145
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
INFINEON
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
Infineon
24+
NA
3000
進口原裝正品優(yōu)勢供應(yīng)
 詢價
英飛凌
2020+
TO-220
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
英飛凌
21+
PG-TO220-3
6000
絕對原裝現(xiàn)貨
 詢價
Infineon(英飛凌)
2447
PG-TO220-3
115000
500個/管一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期
 詢價
Infine
21+
25000
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票!
 詢價
Infineon/英飛凌
21+
PG-TO220-3
6000
原裝現(xiàn)貨正品
 詢價
INFINEON/英飛凌
23+
NA
9000
原裝正品假一罰百!可開增票!
 詢價
更多IPP60R280P6供應(yīng)商 更新時間2025-2-22 10:10:00

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