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IPP60R750E6

600V CoolMOS E6 Power Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhighcommutationruggedness ?Easyto

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R750E6

N-Channel MOSFET Transistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.75? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustde

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPP60R750E6

Metal Oxide Semiconductor Field Effect Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IIPD60R750E6

N-ChannelMOSFETTransistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.75? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IIPP60R750E6

N-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.75? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustde

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPA60R750E6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA60R750E6

600VCoolMOSE6PowerTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhighcommutationruggedness ?Easyto

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA60R750E6

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220FPackage ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplicati

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPD60R750E6

N-ChannelMOSFETTransistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.75? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPD60R750E6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數(shù)

  • 型號：

    IPP60R750E6

  • 功能描述：

    MOSFET N-CH 650V 5.7A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
Infineon
22+23+
TO220
13397
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
Infineon(英飛凌)
23+
TO-220
7793
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
INFINEO
2016+
TO-220
6528
房間原裝進口現(xiàn)貨假一賠十
 詢價
INFINE0N
23+
TO-220-3
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
INFINEON/英飛凌
23+
TO-220
10000
公司只做原裝正品
 詢價
INFINEON
21+
TO-220
10000
原裝現(xiàn)貨假一罰十
 詢價
INFINEON/英飛凌
2022+
TO-220
32500
原廠代理 終端免費提供樣品
 詢價
VB
TO-220
68900
原包原標(biāo)簽100%進口原裝常備現(xiàn)貨!
 詢價
INFINEON
23+
TO-220
6000
原裝正品，支持實單
 詢價
hmsemi
2023+
TO-220
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
更多IPP60R750E6供應(yīng)商 更新時間2025-1-22 16:50:00

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