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IPP65R190CFD

N-Channel MOSFET Transistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.19? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsf

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPP65R190CFD

650V CoolMOS C6 CFD POWER Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP65R190CFD

Marking：65F6190；Package：PG-TO220；Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP65R190CFD7

650V CoolMOSa CFD7 SJ Power Device

Features ?Ultra-fastbodydiode ?650Vbreakdownvoltage ?Best-in-classRDS(on) ?Reducedswitchinglosses ?LowRDS(on)dependencyovertemperature

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP65R190CFD7A

Marking：65A190F7；Package：PG-TO220-3；650V CoolMOSa CFD7A SJ Power Device

Features ?Latest650Vautomotivequalifiedtechnologywithintegratedfastbody diodeonthemarketfeaturingultralowQrr ?LowestFOMRDS(on)*QgandRDS(on)*Eoss ?100avalanchetested ?Best-in-classRDS(on)inSMDandTHDpackages

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP65R190CFDA

Metal Oxide Semiconductor Field Effect Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW65R190CFD

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW65R190CFD

N-ChannelMOSFETTransistor

?DESCRITION ?FastSwitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤190m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPW65R190CFD

650VCoolMOSC6CFDPOWERTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW65R190CFDA

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IPP65R190CFD

  • 功能描述：

    MOSFET CoolMOS 650V 190mOhm CFD2 N-Chan MOSFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
英飛凌
24+
TO-220
800
全新原裝正品,公司現(xiàn)貨。
 詢價(jià)
INFINEON
22+
TO-220
1000
進(jìn)口原裝正品現(xiàn)貨,假一罰十價(jià)格合理
 詢價(jià)
INFINEON
23+
TO220
280000
100%原裝現(xiàn)貨
 詢價(jià)
INFINEON/英飛凌
2021+
TO-220
17595
原裝進(jìn)口假一罰十
 詢價(jià)
INFINEON/英飛凌
24+
TO-220F
3580
原裝現(xiàn)貨/15年行業(yè)經(jīng)驗(yàn)歡迎詢價(jià)
 詢價(jià)
INFINEON/英飛凌
19+
TO-220
2900
進(jìn)口原裝假一賠十支持含稅
 詢價(jià)
INFINEON/英飛凌
23+
na
28650
主營品牌深圳百分百原裝現(xiàn)貨假一罰十絕對(duì)價(jià)優(yōu)
 詢價(jià)
INFINEON/英飛凌
24+
TO-220
5345
只做原廠渠道 可追溯貨源
 詢價(jià)
Infineon(英飛凌)
23+
N/A
12000
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
INFINEON
18+
TO-220
5345
原裝庫存有訂單來談優(yōu)勢(shì)
 詢價(jià)
更多IPP65R190CFD供應(yīng)商 更新時(shí)間2025-1-22 17:08:00

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