IPD60R180P7S中文資料英飛凌數(shù)據(jù)手冊PDF規(guī)格書

MOSFET 600V CoolMOSa P7 Power Transistor

The CoolMOS? 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS? P7 series is the successor to the CoolMOS? P6 series. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching applications even more efficient, more compact and much cooler.

Features

? Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness

? Significant reduction of switching and conduction losses

? Excellent ESD robustness >2kV (HBM) for all products

? Better RDS(on)/package products compared to competition enabled by a low RDS(on)*A (below 1Ohm*mm2)

? Large portfolio with granular RDS(on) selection qualified for a variety of industrial and consumer grade applications according to JEDEC (J-STD20 and JESD22)

Benefits

? Ease of use and fast design-in through low ringing tendency and usage across PFC and PWM stages

? Simplified thermal management due to low switching and conduction losses

? Increased power density solutions enabled by using products with smaller footprint and higher manufacturing quality due to >2 kV ESD protection

? Suitable for a wide variety of applications and power ranges

Potential applications

?? PFC stages, hard switching PWM stages and resonant switching stages for e.g.PC Silverbox, Adapter, LCD & PDPTV, Lighting, Server, Telecom and UPS.