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首頁 >IPD65R660CFD>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IPD65R660CFD	文件：3.9515 Mbytes Page：20 Pages	650V CoolMOS CFD Power Transistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPD65R660CFD	文件：4.46997 Mbytes Page：21 Pages	Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPD65R660CFD	文件：335.3 Kbytes Page：2 Pages	N-Channel MOSFET Transistor ?DESCRITION ?Highcommutationruggedness ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.66? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IPD65R660CFDA	文件：1.42987 Mbytes Page：14 Pages	Metal Oxide Semiconductor Field Effect Transistor	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPI65R660CFD	文件：330.89 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor ?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.66? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsf	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IPI65R660CFD	文件：3.9515 Mbytes Page：20 Pages	650VCoolMOSCFDPowerTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPI65R660CFD	文件：4.46997 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPP65R660CFD	文件：4.46997 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPP65R660CFD	文件：338.51 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.66? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsf	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IPP65R660CFD	文件：3.9515 Mbytes Page：20 Pages	650VCoolMOSCFDPowerTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPP65R660CFDA	文件：2.34202 Mbytes Page：15 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFDAseriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPW65R660CFD	文件：3.9515 Mbytes Page：20 Pages	650VCoolMOSCFDPowerTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPW65R660CFD	文件：334.83 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRITION ?FastSwitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤660m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IPW65R660CFD	文件：4.46997 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPX65R660CFD	文件：4.46997 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPX65R660CFDA	文件：2.34202 Mbytes Page：15 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFDAseriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon

詳細(xì)參數(shù)

型號：
IPD65R660CFD
功能描述：
MOSFET COOLM 650V CFD PWR TRANS
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價(jià)格
深圳市安富世紀(jì)電子有限公司	IPD65R660CFD	Infineon/英飛凌	20+	TO-252	16300	終端可免費(fèi)提供樣品,歡迎咨詢	詢價(jià)
深圳市高捷芯城科技有限公司	IPD65R660CFD	Infineon(英飛凌)	23+	標(biāo)準(zhǔn)封裝	7577	原廠渠道供應(yīng),大量現(xiàn)貨,原型號開票。	詢價(jià)
深圳市亞泰盈科電子有限公司	IPD65R660CFD	INFINEON		SOT-252	30216	提供BOM表配單TEL:0755-83759919QQ:2355705587杜S	詢價(jià)
深圳市誠利順電子科技有限公司	IPD65R660CFD	INFINEON	22+	TO252-3	6850	十七年VIP會員,誠信經(jīng)營，一手貨源，原裝正品可零售！	詢價(jià)
深圳市河鋒鑫科技有限公司	IPD65R660CFD	英飛翎	17+	DPAK(TO-252)	31518	原裝正品可含稅交易	詢價(jià)
深圳市賽能新源半導(dǎo)體有限公司	IPD65R660CFD	INFINEON/英飛凌	24+	TO-252	60000	原裝正品進(jìn)口現(xiàn)貨	詢價(jià)
深圳市中福國際管理有限公司	IPD65R660CFD	INFINEON/英飛凌	23+	TO252-3	360000	專業(yè)供應(yīng)MOS/LDO/晶體管/有大量價(jià)格低	詢價(jià)
深圳市聯(lián)世界科技有限公司	IPD65R660CFD	英飛凌	15+	SOT-252	5000	原裝正品現(xiàn)貨庫存價(jià)優(yōu)	詢價(jià)
深圳市華來深電子有限公司	IPD65R660CFD	INFINE0N	23+	TO-252	11846	一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	IPD65R660CFD	INFINEON	1822+	TO252	9852	只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!	詢價(jià)

更多IPD65R660CFD供應(yīng)商更新時(shí)間2024-12-25 13:00:00

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