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IPI045N10N3-G

OptiMOS?? Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IIPA045N10N3

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPA045N10N3

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPA045N10N3G

OptiMOSTM3Power-Transistor

VDS100V RDS(on),max4.5mW ID64A Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Ideal

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA045N10N3G

OptiMOSTM3Power-Transistor,100V

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchronousrectification ?Halogen-freeaccor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA045N10N3G

MaterialContentDataSheet

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPC045N10N3

N-channelenhancementmode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI045N10N3G

OptiMOS??Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI045N10N3G

OptiMOS??Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP045N10N3

OptiMOS??Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP045N10N3G

OptiMOS??Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP045N10N3G

OptiMOS??Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP045N10N3G

OptiMOS??Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP045N10N3G

100VN-ChannelMOSFET

Features ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?Idealforhigh-frequencyswitchingandsynchronousrectification ?VDS ?ID=137A ?RDS(ON)(atVGS=10V)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

IPP045N10N3-G

OptiMOS??Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INFINEON/英飛凌
23+
TO-262
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
INFINEON/英飛凌
2022
TO-262
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價(jià)
INFINEON/英飛凌
TO-262
貨真價(jià)實(shí),假一罰十
25000
詢價(jià)
INFINEON/英飛凌
22+
TO-262
40256
本公司只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
INFINEON/英飛凌
23+
TO-262
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
INFINEON/英飛凌
23+
TO-262
8000
只做原裝現(xiàn)貨
 詢價(jià)
INFINEON/英飛凌
23+
TO-262
7000
詢價(jià)
INFINEON
1503+
TO262-3
3000
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!
 詢價(jià)
Infineon Technologies
24+
原裝
5000
原裝正品,提供BOM配單服務(wù)
 詢價(jià)
Infineon
1931+
N/A
493
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更多IPI045N10N3-G供應(yīng)商 更新時(shí)間2025-1-3 9:48:00

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