首頁 >IPI111N15N3>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

IPI111N15N3

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPI111N15N3G

OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant;Halogenfree ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitch

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI111N15N3-G

OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant;Halogenfree ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitch

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IIPP111N15N3

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPP111N15N3

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPP111N15N3G

OptiMOSTM3Power-TransistorFeaturesExcellentgatechargexRDS(on)product(FOM)

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant;Halogenfree ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitch

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP111N15N3-G

OptiMOSTM3Power-TransistorFeaturesExcellentgatechargexRDS(on)product(FOM)

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant;Halogenfree ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitch

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數(shù)

  • 型號：

    IPI111N15N3

  • 功能描述：

    MOSFET N-Channel 150V MOSFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON/英飛凌
21+
TO262
19000
只做正品原裝現(xiàn)貨
 詢價
INFINEON/英飛凌
23+
TO262-3
10000
公司只做原裝正品
 詢價
INFINEON/英飛凌
23+
T0-262
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
INFINEON/英飛凌
2022
T0-262
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
Infineon/英飛凌
23+
20000
全新、原裝、現(xiàn)貨
 詢價
INFINEON/英飛凌
23+
NA/
60
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價
INFINEON/英飛凌
22+
T0-262
20000
原裝現(xiàn)貨,實單支持
 詢價
ADI
23+
T0-262
8000
只做原裝現(xiàn)貨
 詢價
ADI
23+
T0-262
7000
詢價
INFINEON/英飛凌
22+
TO262-3
90236
詢價
更多IPI111N15N3供應(yīng)商 更新時間2025-1-10 9:02:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多