IPLK80R600P7分立半導體產(chǎn)品的晶體管-FETMOSFET-單個規(guī)格書PDF中文資料

IPLK80R600P7屬于分立半導體產(chǎn)品的晶體管-FETMOSFET-單個。由英飛凌科技股份公司制造生產(chǎn)的IPLK80R600P7晶體管 - FET，MOSFET - 單個分立式場效應晶體管 (FET) 廣泛用于功率轉(zhuǎn)換、電機控制、固態(tài)照明及其他應用，它們具有高頻開關特性，同時又能承載大電流，使其在這些應用中具備一定優(yōu)勢。這類晶體管廣泛應用于要求額定電壓為幾百伏或更低的應用，如果超出該額定電壓值，則 IGBT 等其他器件更具競爭力。

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The latest 800V CoolMOS? P7 series sets a new benchmark in 800V

super junction technologies and combines best-in-class performance with

state of the art ease-of-use, resulting from Infineon’s over 18 years

pioneering super junction technology innovation.

Features

? Best-in-class FOM RDS(on) * Eoss; reduced Qg, Ciss, and Coss

? Best-in-class DPAK RDS(on)

? Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V

? Integrated Zener Diode ESD protection

? Fully optimized portfolio

Benefits

? Best-in-class performance

? Enabling higher power density designs, BOM savings and lower

assembly costs

? Easy to drive and to parallel

? Better production yield by reducing ESD related failures

? Less production issues and reduced field returns

? Easy to select right parts for fine tuning of designs

Potential applications

Recommended for hard and soft switching flyback topologies for low

power Chargers and Adapters.

Product validation

Fully qualified according to JEDEC for Industrial Applications

Please note: The source and sense source pins are not exchangeable.

Their exchange might lead to malfunction. For paralleling 4pin MOSFET

devices the placement of the gate resistor is generally recommended to be

on the Driver Source instead of the Gate.