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IPP26CN10N

OptiMOS?2 Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP26CN10N

isc N-Channel MOSFET Transistor

?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤26m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IPP26CN10NG

OptiMOS?2 Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP26CN10NG

N-channel, normal level

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP26CN10NG

OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IIPP26CN10N

iscN-ChannelMOSFETTransistor

?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤26m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IPB26CN10N

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IPB26CN10N

OptiMOSPower-TransistorFeatureEnhancementmodeLogicLevelAvalancherated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB26CN10NG

OptiMOSPower-TransistorFeatureEnhancementmodeLogicLevelAvalancherated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB26CN10NG

OptiMOS?2Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IPP26CN10N

  • 制造商：

    INFINEON

  • 制造商全稱：

    Infineon Technologies AG

  • 功能描述：

    OptiMOS㈢2 Power-Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INFINEON
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
Infineon/英飛凌
1950+
TO-220
4856
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價(jià)
INFINEON/英飛凌
2021+
TO-220
100500
一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢價(jià)
I
23+
TO-220
10000
公司只做原裝正品
 詢價(jià)
VBsemi
23+
TO220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
INFINEON
21+
TO-220
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
I
22+
TO-220
6000
十年配單,只做原裝
 詢價(jià)
I
23+
TO-220
6000
原裝正品，支持實(shí)單
 詢價(jià)
INFINEON/英飛凌
22+
TO-220
50000
只做原裝正品,假一罰十,歡迎咨詢
 詢價(jià)
INFINEON
8
TO-220
498
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
更多IPP26CN10N供應(yīng)商 更新時(shí)間2025-1-22 9:02:00

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