首頁 >IPP320N20N3G>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
IPP320N20N3G | OptiMOSTM3 Power-Transistor Features N-channel, normal level Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Id | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
IPP320N20N3G | OptiMOS3 Power Transistor Features ?N-channel,normallevel *ExcellentgatechargexRos(on)product(FOM) ?Verylowon-resistanceRos(on) ?175°Coperatingtemperature ?Pb-freeleadplating:RoHScompliant ?QualifiedaccordingtoJEDECfortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Idealf | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
IPP320N20N3G | OptiMOSTM3 Power-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
OptiMOSTM3 Power-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
OptiMOS3PowerTransistor Features ?N-channel,normallevel *ExcellentgatechargexRos(on)product(FOM) ?Verylowon-resistanceRos(on) ?175°Coperatingtemperature ?Pb-freeleadplating:RoHScompliant ?QualifiedaccordingtoJEDECfortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Idealf | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOSTM3Power-TransistorFeaturesN-channel,normallevel Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Id | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS3PowerTransistor Features ?N-channel,normallevel *ExcellentgatechargexRos(on)product(FOM) ?Verylowon-resistanceRos(on) ?175°Coperatingtemperature ?Pb-freeleadplating:RoHScompliant ?QualifiedaccordingtoJEDECfortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Idealf | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
IscN-ChannelMOSFETTransistor ?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
OptiMOSTM3Power-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS3PowerTransistor Features ?N-channel,normallevel *ExcellentgatechargexRos(on)product(FOM) ?Verylowon-resistanceRos(on) ?175°Coperatingtemperature ?Pb-freeleadplating:RoHScompliant ?QualifiedaccordingtoJEDECfortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Idealf | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
OptiMOSTM3Power-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
OptiMOSTM3Power-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOSTM3Power-TransistorFeaturesN-channel,normallevel Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Id | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS3PowerTransistor Features ?N-channel,normallevel *ExcellentgatechargexRos(on)product(FOM) ?Verylowon-resistanceRos(on) ?175°Coperatingtemperature ?Pb-freeleadplating:RoHScompliant ?QualifiedaccordingtoJEDECfortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Idealf | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS3PowerTransistor Features ?N-channel,normallevel *ExcellentgatechargexRos(on)product(FOM) ?Verylowon-resistanceRos(on) ?175°Coperatingtemperature ?Pb-freeleadplating:RoHScompliant ?QualifiedaccordingtoJEDECfortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Idealf | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC |
詳細參數(shù)
- 型號：
IPP320N20N3G
- 制造商：
Rochester Electronics LLC
- 制造商：
Infineon Technologies AG
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飛凌 |
22+ |
TO-220 |
1000 |
力挺實單只有原裝 |
詢價 | ||
INFINEON/英飛凌 |
21+ |
TO-220-3 |
20000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
INFINEON |
22+ |
sot |
6600 |
正品渠道現(xiàn)貨,終端可提供BOM表配單。 |
詢價 | ||
Infineon(英飛凌) |
23+ |
TO-220 |
1024 |
原廠直供,支持賬期,免費供樣,技術支持 |
詢價 | ||
Infineon Technologies |
24+ |
標準 |
44478 |
熱賣原裝進口 |
詢價 | ||
INFINEON/英飛凌 |
2021+ |
TO-220 |
16947 |
原裝進口假一罰十 |
詢價 | ||
INFINEON |
21+ |
TO-220 |
5000 |
詢價 | |||
INFINEON/英飛凌 |
24+ |
TO220 |
10800 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
Infineon(英飛凌) |
23+ |
N/A |
12000 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
INFINEON |
2019 |
TO-220 |
23500 |
原裝正品鉆石品質(zhì)假一賠十 |
詢價 |
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