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IPP600N25N3-G

OptiMOS3 Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IIPD600N25N3

N-ChannelMOSFETTransistor

?DESCRITION ?Highfrequencyswitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤60m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPB600N25N3

OptiMOS3Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB600N25N3G

OptiMOS3Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB600N25N3G

OptiMOSTM3Power-TransistorFeaturesExcellentgatechargexRDS(on)product(FOM)

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Id

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB600N25N3G

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPB600N25N3G

OptiMOSTM3Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Id

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB600N25N3-G

OptiMOS3Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD600N25N3

N-ChannelMOSFETTransistor

?DESCRITION ?Highfrequencyswitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤60m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPD600N25N3G

OptiMOSTM3Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Id

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

供應(yīng)商型號品牌批號封裝庫存備注價格
INFENION
NA
16355
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
詢價
INFINEON/英飛凌
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
INFINEON
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
INFINEON
21+
TO-220
10000
原裝現(xiàn)貨假一罰十
詢價
INFINEON/英飛凌
2022
TO-220
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價
INFINEON
1932+
TO-220
1331
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
INFINEON/英飛凌
23+
TO-220
11220
英飛凌優(yōu)勢原裝IC,高效BOM配單。
詢價
INFINEON/英飛凌
23+
NA/
3450
原裝現(xiàn)貨,當天可交貨,原型號開票
詢價
INFINEON
23+
TO-220
7000
詢價
INFINEON/英飛凌
22+
TO-220
87805
詢價
更多IPP600N25N3 G供應(yīng)商 更新時間2025-2-23 21:25:00