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IPB600N25N3-G

OptiMOS3 Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD600N25N3

N-ChannelMOSFETTransistor

?DESCRITION ?Highfrequencyswitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤60m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPD600N25N3G

OptiMOSTM3Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD600N25N3G

OptiMOSTM3Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Id

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI600N25N3

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPI600N25N3G

OptiMOS3Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI600N25N3G

OptiMOSTM3Power-TransistorFeaturesExcellentgatechargexRDS(on)product(FOM)

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Id

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI600N25N3G

OptiMOSTM3Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Id

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI600N25N3-G

OptiMOS3Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP600N25N3

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPP600N25N3G

OptiMOSTM3Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Id

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP600N25N3G

OptiMOSTM3Power-TransistorFeaturesExcellentgatechargexRDS(on)product(FOM)

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Id

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP600N25N3G

OptiMOS3Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP600N25N3-G

OptiMOS3Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
INFineon
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
INFineon
19+
TO-263
20
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價(jià)
INFINEON/英飛凌
23+
TO-263
11220
英飛凌優(yōu)勢原裝IC,高效BOM配單。
詢價(jià)
INFINEON/英飛凌
22+
TO-263
87757
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INFineon
23+
TO-263
10000
原裝正品現(xiàn)貨
詢價(jià)
Infineon Technologies
21+
D2PAK(TO-263AB)
2000
100%進(jìn)口原裝!長期供應(yīng)!絕對(duì)優(yōu)勢價(jià)格(誠信經(jīng)營)!
詢價(jià)
Infineon
1931+
N/A
2379
加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購物
詢價(jià)
INFINEON/英飛凌
2021+
SMD
100500
一級(jí)代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
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INFINEON
1809+
TO263-2
1675
就找我吧!--邀您體驗(yàn)愉快問購元件!
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Infineon
22+
NA
2000
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更多IPB600N25N3-G供應(yīng)商 更新時(shí)間2025-1-8 13:00:00