首頁 >IPB60R190P6>規(guī)格書列表

零件編號下載 訂購功能描述/絲印制造商 上傳企業(yè)LOGO

IPB60R190P6

Marking：6R190P6；Package：PG-TO263；Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS?P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Theoffereddevicesprovideallbenefitsofafastsw

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB60R190P6

Marking：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPB60R190P6

Material Content Data Sheet

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB60R190P6_15

Material Content Data Sheet

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R190P6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS?P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Theoffereddevicesprovideallbenefitsofafastsw

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R190P6

MetalOxideSemiconductorFieldEffectTransistor

600VCoolMOS?P6PowerTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?P6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhigh

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R190P6

N-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.19? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustde

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPW60R190P6

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤190m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPW60R190P6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS?P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Theoffereddevicesprovideallbenefitsofafastsw

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW60R190P6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
Infineon(英飛凌)
23+
TO-263
10524
原廠直供,支持賬期,免費(fèi)供樣,技術(shù)支持
 詢價(jià)
INFINEON/英飛凌
2021+
SOT-263
17065
原裝進(jìn)口假一罰十
 詢價(jià)
INFINEON
NA
50
全新原裝!優(yōu)勢庫存熱賣中!
 詢價(jià)
INFINEON
23+
TO-263
10000
正規(guī)渠道,只有原裝!
 詢價(jià)
Infineon(英飛凌)
23+
TO-263
21316
正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊
 詢價(jià)
INFINEON
18+
TO-263
932
全新原裝
 詢價(jià)
INFINEON
23+
TO-263
12174
原裝進(jìn)口、正品保障、合作持久
 詢價(jià)
INFINEON/英飛凌
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
INFINEON/英飛凌
24+
TO-263
698
原裝現(xiàn)貨假一賠十
 詢價(jià)
INFINEON
19+
TO263
900
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
更多IPB60R190P6供應(yīng)商 更新時(shí)間2025-2-21 10:05:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多