首頁 >IPP65R190C6>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IPP65R190C6 | Extremely low losses due to very low FOM Rdson*Qg and Eoss Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
IPP65R190C6 | 650V CoolMOS C6 Power Transistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
IPP65R190C6 | N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | |
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor ?DESCRITION ?FastSwitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤190m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
650VCoolMOSC6PowerTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
ExtremelylowlossesduetoverylowFOMRdson*QgandEoss Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
650VCoolMOSC6PowerTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
ExtremelylowlossesduetoverylowFOMRdson*QgandEoss Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
ExtremelylowlossesduetoverylowFOMRdson*QgandEoss Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
iscN-ChannelMOSFETTransistor ?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.19? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
650VCoolMOSC6PowerTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
ExtremelylowlossesduetoverylowFOMRdson*QgandEoss Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor ?DESCRITION ?FastSwitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤190m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
650VCoolMOSC6PowerTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
詳細參數(shù)
- 型號:
IPP65R190C6
- 功能描述:
MOSFET COOL MOS
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Infineon(英飛凌) |
23+ |
TO-220 |
8145 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價 | ||
INFINEON/CYPRESS |
24+ |
- |
159543 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
INFINEON |
TO220 |
17432 |
提供BOM表配單只做原裝貨值得信賴 |
詢價 | |||
inf進口原 |
22+23+ |
TO-220 |
22852 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
inf進口原 |
24+ |
TO-220 |
9860 |
一級代理 |
詢價 | ||
Infineon(英飛凌) |
2112+ |
PG-TO220-3 |
115000 |
500個/管一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期 |
詢價 | ||
Infineon/英飛凌 |
21+ |
PG-TO220-3 |
6000 |
原裝現(xiàn)貨正品 |
詢價 | ||
Infineon(英飛凌) |
23+ |
NA |
20094 |
正納10年以上分銷經(jīng)驗原裝進口正品做服務做口碑有支持 |
詢價 | ||
Infineon/英飛凌 |
21+ |
PG-TO220-3 |
10000 |
原裝,品質保證,請來電咨詢 |
詢價 | ||
INFINEON/英飛凌 |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 |
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