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IPS09N03LAG

OptiMOS?2Power-Transistor

Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPS09N03LBG

OptiMOS?2Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPS09N03LBG

OptiMOS?2Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPU09N03LA

OptiMOS?2Power-Transistor

Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPU09N03LA

OptiMOS2Power-Transistor

Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPU09N03LA

OptiMOS2Power-Transistor

Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPU09N03LAG

OptiMOS?2Power-Transistor

Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPU09N03LBG

OptiMOS?2Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

P09N03BDC

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

P09N03BDG

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

PJ09N03D

25VN-ChannelEnhancementModeMOSFET

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

PJD09N03

25VN-ChannelEnhancementModeMOSFET

FEATURES ?RDS(ON),VGS@10V,IDS@30A=9m? ?RDS(ON),VGS@4.5V,IDS@30A=12m? ?Advancedtrenchprocesstechnology ?HighDensityCellDesignForUitraLowOn-Resistance ?SpeciallyDesignedforDC/DCConvertersandMotorDrivers ?FullyCharacterizedAvalancheVoltageandCurrent

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    IPS09N03LA G

  • 功能描述:

    MOSFET N-CH 25V 50A IPAK

  • RoHS:

  • 類(lèi)別:

    分離式半導(dǎo)體產(chǎn)品 >> FET - 單

  • 系列:

    OptiMOS™

  • 標(biāo)準(zhǔn)包裝:

    1,000

  • 系列:

    MESH OVERLAY™ FET

  • 型:

    MOSFET N 通道,金屬氧化物 FET

  • 特點(diǎn):

    邏輯電平門(mén)

  • 漏極至源極電壓(Vdss):

    200V 電流 - 連續(xù)漏極(Id) @ 25°

  • C:

    18A 開(kāi)態(tài)Rds(最大)@ Id, Vgs @ 25°

  • C:

    180 毫歐 @ 9A,10V Id 時(shí)的

  • Vgs(th)(最大):

    4V @ 250µA 閘電荷(Qg) @

  • Vgs:

    72nC @ 10V 輸入電容(Ciss) @

  • Vds:

    1560pF @ 25V 功率 -

  • 最大:

    40W

  • 安裝類(lèi)型:

    通孔

  • 封裝/外殼:

    TO-220-3 整包

  • 供應(yīng)商設(shè)備封裝:

    TO-220FP

  • 包裝:

    管件

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更多IPS09N03LA G供應(yīng)商 更新時(shí)間2024-12-25 9:10:00