首頁 >IPU09N03LBG>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IPU09N03LBG | OptiMOS?2 Power-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
25VN-ChannelEnhancementModeMOSFET FEATURES ?RDS(ON),VGS@10V,IDS@30A=9m? ?RDS(ON),VGS@4.5V,IDS@30A=12m? ?Advancedtrenchprocesstechnology ?HighDensityCellDesignForUitraLowOn-Resistance ?SpeciallyDesignedforDC/DCConvertersandMotorDrivers ?FullyCharacterizedAvalancheVoltageandCurrent | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
25VN-ChannelEnhancementModeMOSFET FEATURES ?RDS(ON),VGS@10V,IDS@30A=9m? ?RDS(ON),VGS@4.5V,IDS@30A=12m? ?Advancedtrenchprocesstechnology ?HighDensityCellDesignForUitraLowOn-Resistance ?SpeciallyDesignedforDC/DCConvertersandMotorDrivers ?FullyCharacterizedAvalancheVoltageandCurrent | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N??hannelLogicLevelEnhancementModeFieldEffectTransistor | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
Halogen-freeAccordingtoIEC61249-2-21 | DINTEK DinTek Semiconductor Co,.Ltd | DINTEK | ||
N-Channel30V(D-S)MOSFETHalogen-free | DINTEK DinTek Semiconductor Co,.Ltd | DINTEK | ||
N-channelEnhancementModePowerMOSFET Features ?VDS=30V,ID=80A RDS(ON) | BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司 | Bychip | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導體有限公司 | DOINGTER | ||
N??hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS25V RDSON(MAX.)9mΩ ID50A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
N??hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS25V RDSON(MAX.)9mΩ ID50A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
N??hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS30V RDSON(MAX.)9mΩ ID50A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE |
詳細參數(shù)
- 型號:
IPU09N03LBG
- 功能描述:
MOSFET N-KANAL POWER MOS
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
INFINEON |
24+ |
IPAK(TO-251) |
8866 |
詢價 | |||
INFINEON |
23+ |
TO215-3 |
5000 |
原裝正品,假一罰十 |
詢價 | ||
INFINEON |
23+ |
TO251-3 |
8600 |
全新原裝現(xiàn)貨 |
詢價 | ||
INFINEON |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
INFINE0N |
23+ |
TO-251 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
Infineon/英飛凌 |
18+ |
TO215-3 |
32031 |
全新原裝現(xiàn)貨,可出樣品,可開增值稅發(fā)票 |
詢價 | ||
INFINEON/英飛凌 |
24+ |
TO215-3 |
25500 |
授權(quán)代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價銷售 |
詢價 | ||
INFINEON/英飛凌 |
2021+ |
TO215-3 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
INFINEON |
1503+ |
TO251-3 |
3000 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
INFINEON/英飛凌 |
22+ |
TO215-3 |
9600 |
原裝現(xiàn)貨,優(yōu)勢供應,支持實單! |
詢價 |
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