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首頁(yè) >IPW65R110CFD>規(guī)格書列表

零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
IPW65R110CFD	文件：3.85934 Mbytes Page：20 Pages	Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPW65R110CFD	文件：335.75 Kbytes Page：2 Pages	N-Channel MOSFET Transistor ?DESCRITION ?SuitableforresonantSwitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤110m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IPW65R110CFD	文件：3.85934 Mbytes Page：20 Pages	Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPW65R110CFDA	文件：2.33045 Mbytes Page：16 Pages	Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPW65R110CFD7	文件：1.39045 Mbytes Page：14 Pages	650V CoolMOS? CFD7 SJ Power Device	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IIPP65R110CFD	文件：338.95 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.11? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsf	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IIPW65R110CFD	文件：335.75 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRITION ?SuitableforresonantSwitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤110m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IPA65R110CFD	文件：3.85934 Mbytes Page：20 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPA65R110CFD	文件：314.54 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor ?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IPB65R110CFD	文件：317.44 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor ?FEATURES ?WithTO-263(D2PAK)packaging ?Ultra-fastbodydiode ?Highspeedswitching ?Veryhighcommutationruggedness ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz ?APPLICATIONS ?Switchingapplication	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IPB65R110CFD	文件：3.85934 Mbytes Page：20 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPB65R110CFDA	文件：2.33045 Mbytes Page：16 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPI65R110CFD	文件：315.67 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor ?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.11? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsf	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IPI65R110CFD	文件：3.85934 Mbytes Page：20 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPP65R110CFD	文件：338.95 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.11? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsf	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IPP65R110CFD	文件：3.85934 Mbytes Page：20 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPP65R110CFDA	文件：2.33045 Mbytes Page：16 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPX65R110CFD	文件：3.85934 Mbytes Page：20 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPX65R110CFDA	文件：2.33045 Mbytes Page：16 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon

詳細(xì)參數(shù)

型號(hào)：
IPW65R110CFD
功能描述：
MOSFET N-Channel MOSFET 650V 110mOhm
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市勤思達(dá)科技有限公司	IPW65R110CFD	IR	2020+	TO-247	22000	全新原裝正品現(xiàn)貨庫(kù)存價(jià)格優(yōu)勢(shì)	詢價(jià)
深圳市特瑞斯科技有限公司	IPW65R110CFD	INFINEON	23+	TO-247	16500	一級(jí)分銷商!	詢價(jià)
中天科工半導(dǎo)體（深圳）有限公司	IPW65R110CFD	INFINEON	24+	標(biāo)準(zhǔn)	46637	熱賣原裝進(jìn)口	詢價(jià)
深圳市龍瀚電子有限公司	IPW65R110CFD	INFINEO	16+	TO-247	6102	全新原裝/深圳現(xiàn)貨庫(kù)2	詢價(jià)
深圳市華睿芯科技有限公司	IPW65R110CFD	INFINEON/英飛凌	23+	TO247	20000	原廠原裝,正品現(xiàn)貨,假一罰十	詢價(jià)
深圳市英科美電子有限公司	IPW65R110CFD	INFINEON/英飛凌	2021+	TO-247	18070	原裝進(jìn)口假一罰十	詢價(jià)
深圳市納艾斯科技有限公司	IPW65R110CFD	INFINEO	2020+	TO-247	8000	只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增	詢價(jià)
深圳市航潤(rùn)創(chuàng)能電子集團(tuán)有限公司	IPW65R110CFD	INFINEON/英飛凌	1911+	TO-247	800	進(jìn)口原裝假一賠十支持含稅	詢價(jià)
深圳市祥瑞智科技有限公司	IPW65R110CFD	INF	22+	TO-247	6000	原裝正品!!!優(yōu)勢(shì)庫(kù)存!0755-83210901	詢價(jià)
深圳市坤融電子科技有限公司	IPW65R110CFD	INFINEON/英飛凌	24+	TO-247	230	只做原廠渠道可追溯貨源	詢價(jià)

更多IPW65R110CFD供應(yīng)商更新時(shí)間2024-10-26 9:03:00

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