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IQXO-540

Crystal Clock Oscillator Specification

IQD

IQD Frequency Products Ltd

IQXO-540-AUTO

Crystal Clock Oscillator Specification

IQD

IQD Frequency Products Ltd

IRC540

PowerMOSFET(Vdss=100V,Rds(on)=0.077ohm,Id=28A)

Continuousdraincurrent28A@Tc=25degC,Vgs=10V.Drain-to-sourcebreakdownvoltage100V.Drain-to-sourceon-resistance0.077Ohm

IRF

International Rectifier

IRC540PBF

HEXFETPOWERMOSFET(VDSS=100V,RDS(on)=0.077廓,ID=28A)

Continuousdraincurrent28A@Tc=25degC,Vgs=10V.Drain-to-sourcebreakdownvoltage100V.Drain-to-sourceon-resistance0.077OhmLead-Free

IRF

International Rectifier

IRF540

N-ChannelPowerMOSFETs,27A,60-100V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF540

N-channelTrenchMOStransistor

VDSS=100V ID=23A RDS(ON)≤77m? GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?Lowthermalresistance Applications:- ?d.c.t

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

IRF540

N-CHANNEL100V-00.50ohm-30A-TO-220/TO-220FIPOWERMOSFET

N-CHANNEL100V-00.50?-30A-TO-220/TO-220FIPOWERMOSFET ■TYPICALRDS(on)=0.050? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175oCOPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZA

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF540

HEXFETPOWERMOSFET

ThirdGenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. 1.Dynamicdv/dtRating 2.RepetitiveAvalancheRated 3.175°COperatingTemperature

IRF

International Rectifier

IRF540

N-CHANNEL100V-0.055廓-22ATO-220LOWGATECHARGESTripFET??IIPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF540

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF540

N-ChannelPowerMOSFET

ID(A)28 VDSS(V)100 RDS(ON)(Ω)0.077@VGS=10V QG(nC)max.72 DESCRIPTION TheNellIRF540areN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.Theyaredesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofop

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

IRF540

N-ChannelPowerMOSFETs,27A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ●

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF540

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF540

PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRated

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

KERSEMI

Kersemi Electronic Co., Ltd.

IRF540

25Aand28A,80Vand100V,0.077and0.100Ohm,N-ChannelPowerMOSFETs

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ●

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF540

iscN-ChannelMosfetTransistor

DESCRITION ·Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ·FEATURES ·LowRDS(on) ·VGSRatedat±20V ·SiliconGateforFastSwitchingSpeed ·Rugged ·LowDriveRequirements

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF540

N-ChannelPowerMOSFET(100V/27A)

GENERALDESCRIPTION ItusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge. Thisdeviceissuitableforhighcurrentloadapplications. FEATURE ●Highcurrentrating ●UltralowerRDS(on) ●GoodstabilityanduniformitywithhighEAS ●Excellentpack

FS

First Silicon Co., Ltd

IRF540

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRF540

N-ChannelMOSFETusesadvancedtrenchtechnology

Description： ThisN-ChannelMOSFETusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(on)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. Features： 1)VDS=100V,ID=30A,RDS(ON)≤70m?@VGS=10V 2)Lowgatecharge. 3)Greendeviceavailable. 4)Advancedhig

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

IRF540

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfor

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

供應(yīng)商型號品牌批號封裝庫存備注價格
C-MAC
23+
DIP-4
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
C-MAC
23+
DIP-4
6500
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
C-MAC
23+
DIP-4
6500
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
N/A
2021+
SMD
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
A
24+
b
6
詢價
IR
22+
TO220
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價
IR
23+
TO220
7000
詢價
更多IQXO-540供應(yīng)商 更新時間2025-1-11 11:09:00

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