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IR0102HC1A

包裝:盒 類別:RF/IF,射頻/中頻和 RFID 射頻混頻器 描述:MIXER

L3 Narda-MITEQ

L3 Narda-MITEQ

L3 Narda-MITEQ

IR0102HC1B

包裝:盒 類別:RF/IF,射頻/中頻和 RFID 射頻混頻器 描述:MIXER

L3 Narda-MITEQ

L3 Narda-MITEQ

L3 Narda-MITEQ

IR0102HC1C

包裝:盒 類別:RF/IF,射頻/中頻和 RFID 射頻混頻器 描述:MIXER

L3 Narda-MITEQ

L3 Narda-MITEQ

L3 Narda-MITEQ

IRFD010

HEXFETTRANSISTORSN-CHANNELHEXDIP

50Volts,0.20Ohm,1-WattHEXDIP

IRF

International Rectifier

IRFR010

N-CHANNELPOWERMOSFET

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFR010

PowerMOSFET

DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR010

AVALANCHEANDdv/dtRATED

IRF

International Rectifier

IRFR010

PowerMOSFET

DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR010

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR010

PowerMOSFET

FEATURES ?Lowdrivecurrent ?Surface-mount ?Fastswitching ?Easeofparalleling ?Excellenttemperaturestability ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION ThepowerMOSFETtechnologyisthekeytoVishay’s advancedlin

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR010PBF

PowerMOSFET

DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR010PBF

PowerMOSFET

DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR010PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR010TRLPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR010TRPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR010TRRPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU010

AVALANCHEANDdv/dtRATED

IRF

International Rectifier

IRFU010

N-CHANNELPOWERMOSFET

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFU010

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

ISM010

SurfaceMountDevices

SPSEMIStarHope

瞬雷電子上海瞬雷科技有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    IR0102HC1B

  • 制造商:

    L3 Narda-MITEQ

  • 類別:

    RF/IF,射頻/中頻和 RFID > 射頻混頻器

  • 包裝:

  • 描述:

    MIXER

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MITEQ
100
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ADIMPEX
23+
new
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
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IOR
18+
QFN
10000
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IR
22+
LGA
6000
終端可免費(fèi)供樣,支持BOM配單
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IR
23+
LGA
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
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IR
23+
LGA
8000
只做原裝現(xiàn)貨
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IR
23+
LGA
7000
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IOR
23+
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10000
QFN
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FDK
ROHS
56520
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IR
24+
TO263-2.5
1000
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更多IR010供應(yīng)商 更新時(shí)間2025-1-3 10:01:00