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IRF330

N-CHANNELPOWERMOSFETS

FEATURES ●LowRDS(on) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●LowInputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Standard)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF330

N-ChannelPowerMOSFETs,5.5A,350V/400V

Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VQSRatedat±20V ?SiliconGateforFastSwitchingSp

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF330

TRANSISTORSN-CHANNEL(Vdss=400V,Rds(on)=1.00ohm,Id=5.5A)

TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddio

IRF

International Rectifier

IRF330

5.5A,400V,1.000Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRF330

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRF330

iscN-ChannelMOSFETTransistor

DESCRIPTION ?DrainCurrentID=5.5A@TC=25℃ ?DrainSourceVoltage- :VDSS=400V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) ?FastSwitchingSpeed APPLICATIONS ?Highvoltage,highspeedapplications ?Off-lineswitchingpowersupplies,UPS,ACandDC motorco

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF330

N-ChannelPowerMOSFETs,5.5A,350V/400V

Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VQSRatedat±20V ?SiliconGateforFastSwitchingSp

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF330

IRF330-333/IRF730-733MTM/MTP5N35/5N40N-ChannelPowerMOSFETs

Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VQSRatedat±20V ?SiliconGateforFastSwitchingSp

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF330

IRF330-333/IRF730-733MTM/MTP5N35/5N40N-ChannelPowerMOSFETs

Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VQSRatedat±20V ?SiliconGateforFastSwitchingSp

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFE330

REPETITIVEAVALANCHEANDdv/dtRATED

IRF

International Rectifier

IRFE330

SimpleDriveRequirements

IRF

International Rectifier

IRFF330

3.5A,400V,1.000Ohm,N-ChannelPowerMOSFET

3.5A,400V,1.000Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa

Intersil

Intersil Corporation

IRFF330

N-ChannelMOSFETinaHermeticallysealedTO39

N-ChannelMOSFETinaHermeticallysealedTO39MetalPackage. N-ChannelMOSFET. VDSS=400V ID=3A RDS(ON)=1?

SEME-LAB

Seme LAB

IRFF330

3.5A,400V,1.000Ohm,N-ChannelPowerMOSFET

3.5A,400V,1.000Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFR330

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFR330A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFR330B

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFR330B

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFU330

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFU330A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
17+
QFN
50
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價(jià)
IR
23+
QFN
10000
原裝正品現(xiàn)貨
詢價(jià)
IR
1948+
SOT
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價(jià)
原裝IR
2023+
TO-220
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
詢價(jià)
IR
23+
SOT
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢價(jià)
IR
22+
SOT-252
6000
終端可免費(fèi)供樣,支持BOM配單
詢價(jià)
原裝IR
23+
原廠正規(guī)渠道
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
IR
2023+
TO-220
4885
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
詢價(jià)
原裝IR
23+
原廠正規(guī)渠道
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
23+24
SOT-252
9860
原廠原包裝。終端BOM表可配單。可開(kāi)13%增值稅
詢價(jià)
更多IR330供應(yīng)商 更新時(shí)間2025-1-5 14:06:00