零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRF240 | N-Channel Power MOSFETs, 18A, 150-200V N-ChannelPowerMOSFETs,18A,150-200V | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | |
IRF240 | REPETITIVE AVALANCHE AND dv/dt RATED PartNumberBVDSSRDS(on)ID IRF240200V0.18?18A TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateres | IRF International Rectifier | IRF | |
IRF240 | Static Drain-Source On-Resistance DESCRIPTION ·DrainCurrentID=18A@TC=25℃ ·DrainSourceVoltage-:VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance:RDS(on)=0.18Ω(Max) APPLICATIONS ·Switchingpowersupplies ·Switchingconverters,motordriver,relaydriver ·Audioamplifierandservomotors | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
IRF240 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE PartNumberBVDSSRDS(on)ID IRF240200V0.18?18A TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-sta | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | |
IRF240 | N-CHANNEL POWER MOSFET FEATURES ?LowRDs | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | |
IRF240 | N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS | SEME-LAB Seme LAB | SEME-LAB | |
IRF240 | Repetitive Avalanche Ratings | IRF International Rectifier | IRF | |
IRF240 | SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | |
IRF240 | N-CHANNEL POWER MOSFET | SEME-LAB Seme LAB | SEME-LAB | |
IRF240 | 18A, 200V, 0.180 Ohm, N-Channel Power MOSFET | Intersil Intersil Corporation | Intersil | |
N-Channel Power MOSFETs, 18A, 150-200V N-ChannelPowerMOSFETs,18A,150-200V | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
Avalanche Energy Rated N-Channel Power MOSFETs AvalancheEnergyRatedN-ChannelPowerMOSFETs TheIRF240R,IRF241R,IRF242RandIRF243RareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.Thesearen-channelenhancement-modesilicon-gatepowerfield | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
N-CHANNEL POWER MOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
Repetitive Avalanche Ratings | IRF International Rectifier | IRF | ||
N.CHANNEL POWER MOSFET | SEME-LAB Seme LAB | SEME-LAB |
詳細(xì)參數(shù)
- 型號:
IRF240
- 制造商:
International Rectifier
- 功能描述:
Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) TO-3
- 功能描述:
TRANS MOSFET N-CH 200V 18A 3PIN TO-204AE - Bulk
- 功能描述:
Single N-Channel 200 V 125 W 60 nC Hexfet Transistor Through Hole - TO-3
- 功能描述:
N CHANNEL MOSFET, 10V, 18A TO-204AE; Transistor
- Polarity:
N Channel; Continuous Drain Current
- Id:
18A; Drain Source Voltage
- Vds:
10V; On Resistance
- Rds(on):
180mohm; Rds(on) Test Voltage
- Vgs:
200V; Threshold Voltage Vgs
- Typ:
4V ;RoHS
- Compliant:
No
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
N/A |
8000 |
全新原裝正品,現(xiàn)貨銷售 |
詢價(jià) | ||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢價(jià) | ||
INTERNATIONA |
05+ |
原廠原裝 |
4300 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
IR |
23+ |
模塊 |
450 |
全新原裝正品,量大可訂貨!可開17%增值票!價(jià)格優(yōu)勢! |
詢價(jià) | ||
IR |
24+ |
TO-3 |
10000 |
詢價(jià) | |||
IR |
16+ |
TO-3 |
1200 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
IR |
2015+ |
TO-3(鐵帽) |
19889 |
一級代理原裝現(xiàn)貨,特價(jià)熱賣! |
詢價(jià) | ||
IOR |
23+ |
CAN |
1300 |
特價(jià)庫存 |
詢價(jià) | ||
INTERNATIONALRECTIFIER |
16+ |
NA |
8800 |
原裝現(xiàn)貨,貨真價(jià)優(yōu) |
詢價(jià) | ||
IR |
23+ |
TO-3 |
5000 |
原裝正品,假一罰十 |
詢價(jià) |
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