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IRF2807PBF

Advanced Process Technology

IRF

International Rectifier

IRF2807PBF

Advanced Process Technology

KERSEMI

Kersemi Electronic Co., Ltd.

IRF2807PBF_15

Advanced Process Technology

IRF

International Rectifier

IRF2807S

AdvancedProcessTechnology

Description AdvancedMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,providesthede

KERSEMI

Kersemi Electronic Co., Ltd.

IRF2807S

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF2807S

AdvancedProcessTechnology

IRF

International Rectifier

IRF2807S

HEXFETPowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF2807S

HEXFETPowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF2807SPBF

AdvancedProcessTechnologyUltraLowOn-Resistance

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

IRF2807SPBF

HEXFETPowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF2807PBF

  • 功能描述：

    MOSFET MOSFT 75V 82A 13mOhm 106.7nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INFINEON
21+
153000
原裝正品
 詢(xún)價(jià)
IR
24+
TO-220
28855
保證進(jìn)口原裝現(xiàn)貨假一賠十
 詢(xún)價(jià)
IR
2020+
TO-220
9600
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
 詢(xún)價(jià)
IR
2020+
TO-220
22000
全新原裝正品 現(xiàn)貨庫(kù)存 價(jià)格優(yōu)勢(shì)
 詢(xún)價(jià)
INFINEON
21+
SMD
16230
十年信譽(yù),只做原裝,有掛就有現(xiàn)貨!
 詢(xún)價(jià)
INFINEON
20+
TO-220
26000
實(shí)單請(qǐng)給接受價(jià)
 詢(xún)價(jià)
INFINEON/IR
1907+
NA
2850
20年老字號(hào),原裝優(yōu)勢(shì)長(zhǎng)期供貨
 詢(xún)價(jià)
Infineon Technologies
24+
TO-220AB
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢(xún)價(jià)
IR
24+
TO-220
15000
全新原裝的現(xiàn)貨
 詢(xún)價(jià)
IR
10+
TO220
62000
原裝正品現(xiàn)貨優(yōu)勢(shì)18
 詢(xún)價(jià)
更多IRF2807PBF供應(yīng)商 更新時(shí)間2025-2-22 11:00:00

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