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IRF3808PBF

HEXFET Power MOSFET

Description DesignedspecificallyforAutomotiveapplications,thisAdvancedPlanarStripeHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtem

IRF

International Rectifier

IRF3808PBF_15

Advanced Process Technology

IRF

International Rectifier

IRF3808S

AUTOMOTIVEMOSFET

Description DesignedspecificallyforAutomotiveapplications,thisAdvancedPlanarStripeHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemper

IRF

International Rectifier

IRF3808S

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF3808SLPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF3808SPBF

AUTOMOTIVEMOSFET

Description ThisAdvancedPlanarStripeHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,lowRθJC,fastswitchingspeedandimproved

IRF

International Rectifier

IRF3808SPBF

AdvancedProcessTechnology

Description ThisAdvancedPlanarStripeHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,lowRθJC,fastswitchingspeedandimproved

IRF

International Rectifier

IRF3808SPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF3808STRRPBF

HighEfficiencySynchronousRectificationinSMPS

Description ThisAdvancedPlanarStripeHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,lowRθJC,fastswitchingspeedandimproved

IRF

International Rectifier

LP3808

High-precisionLowVoltageDetector

POWERLowpower Semiconductor inc

微源半導(dǎo)體微源半導(dǎo)體股份有限公司

LT3808

LowInputVoltage,SynchronousStep-DownDC/DCController

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LTC3808

NoRSENSE,LowEMI,SynchronousDC/DCControllerwithOutputTracking

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LTC3808

NoRSENSETM,LowEMI,SynchronousDC/DCControllerwithOutputTracking

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LTC3808EDE

NoRSENSETM,LowEMI,SynchronousDC/DCControllerwithOutputTracking

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LTC3808EGN

NoRSENSETM,LowEMI,SynchronousDC/DCControllerwithOutputTracking

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

M3808

TiteSnap-In-2?LiquidTightCordgrips

HeycoHeyco.

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MIC3808

Push-PullPWMController

GeneralDescription TheMIC3808andMIC3809areafamilyofcomplementaryoutputpush-pullPWMcontrolICsthatfeaturehighspeedandlowpowerconsumption.TheMIC3808/9areidealfortelecomlevel(36Vto75V)isolatedstepdowndc/dcconversionapplicationswherehighoutputcurrent,small

MicrelMicrel Semiconductor

麥瑞半導(dǎo)體

MIC3808

Push-PullPWMController

GeneralDescription TheMIC3808andMIC3809areafamilyofcomplementaryoutputpush-pullPWMcontrolICsthatfeaturehighspeedandlowpowerconsumption.TheMIC3808/9areidealfortelecomlevel(36Vto75V)isolatedstepdowndc/dcconversionapplicationswherehighoutputcurrent,small

MICMIC GROUP RECTIFIERS

昌福電子昌福電子有限公司

MIC3808BM

Push-PullPWMController

GeneralDescription TheMIC3808andMIC3809areafamilyofcomplementaryoutputpush-pullPWMcontrolICsthatfeaturehighspeedandlowpowerconsumption.TheMIC3808/9areidealfortelecomlevel(36Vto75V)isolatedstepdowndc/dcconversionapplicationswherehighoutputcurrent,small

MICMIC GROUP RECTIFIERS

昌福電子昌福電子有限公司

MIC3808BMM

Push-PullPWMController

GeneralDescription TheMIC3808andMIC3809areafamilyofcomplementaryoutputpush-pullPWMcontrolICsthatfeaturehighspeedandlowpowerconsumption.TheMIC3808/9areidealfortelecomlevel(36Vto75V)isolatedstepdowndc/dcconversionapplicationswherehighoutputcurrent,small

MICMIC GROUP RECTIFIERS

昌福電子昌福電子有限公司

詳細參數(shù)

  • 型號:

    IRF3808PBF

  • 功能描述:

    MOSFET MOSFT 75V 140A 7mOhm 150nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
23+
TO-220
34740
保證進口原裝現(xiàn)貨假一賠十
詢價
IR
2020+
TO-220
9600
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
IR
2020+
TO-220
22000
全新原裝正品 現(xiàn)貨庫存 價格優(yōu)勢
詢價
INFINEON/英飛凌
21+
TO-220
6000
原裝正品
詢價
INFINEON/IR
17+
TO-220-3
900
詢價
INFINEON/IR
1907+
NA
4000
20年老字號,原裝優(yōu)勢長期供貨
詢價
Infineon Technologies
24+
TO-220AB
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
詢價
IR
24+
TO-220
15000
全新原裝的現(xiàn)貨
詢價
23+
TO-220
35000
專注原裝正品現(xiàn)貨特價中量大可定
詢價
IR
16+
TO-220
6152
全新原裝/深圳現(xiàn)貨庫2
詢價
更多IRF3808PBF供應(yīng)商 更新時間2024-12-23 18:14:00