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IRFI3710

HEXFETPowerMOSFET

Through-HolePackags TO-220FullPak(FullyIsolated)

IRF

International Rectifier

IRFN3710

TRANSISTORN-CHANNEL(BVdss=100V,Rds(on)=0.028ohm,Id=45A)

100Volt,0.028?,HEXFET Generation5HEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignforwhichHEXFETsarewellknown,prov

IRF

International Rectifier

IRFN3710

N??HANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFP3710

PowerMOSFET(Vdss=100V,Rds(on)=0.025W,Id=57A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFP3710

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FullyAvalancheRated ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤25m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFP3710PBF

HEXFETPOWERMOSFET(VDSS=100V,RDS(on)=0.025廓,ID=57A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFP3710PBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRFR3710Z

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

IRFR3710Z

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤18m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFR3710ZPBF

AUTOMOTIVEMOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturesco

IRF

International Rectifier

IRFR3710ZPBF

HEXFET?PowerMOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturesco

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRFR3710ZPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRFR3710ZPBF

AUTOMOTIVEMOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturesco

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR3710ZPBF

HEXFETPowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR3710ZPBF

AUTOMOTIVEMOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturesco

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR3710ZPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRFR3710ZTRL

HEXFETPowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR3710ZTRLPBF

HEXFET?PowerMOSFET

IRF

International Rectifier

IRFR3710ZTRLPbF

HEXFET?PowerMOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturesco

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRFR3710ZTRPBF

AdvancedProcessTechnology

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào):

    IRF3710ZSTRLPBF

  • 功能描述:

    MOSFET MOSFT 100V 59A 18mOhm 82nC Qg

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INFINEON/IR
1907+
NA
800
20年老字號(hào),原裝優(yōu)勢(shì)長(zhǎng)期供貨
詢(xún)價(jià)
INFINEON
22+
sot
6600
正品渠道現(xiàn)貨,終端可提供BOM表配單。
詢(xún)價(jià)
Infineon Technologies
24+
D2PAK
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
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Infineon(英飛凌)
23+
N/A
12000
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力
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INFINEON
24+
TO263
2400
原裝原廠代理 可免費(fèi)送樣品
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INFINEON TECHNOLOGIES AG
23+
SMD
918000
明嘉萊只做原裝正品現(xiàn)貨
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INFINEON
2405+
原廠封裝
800
原裝正品,渠道可追溯
詢(xún)價(jià)
INFINEON
23+
NA
800
公司現(xiàn)貨原裝
詢(xún)價(jià)
Infineon(英飛凌)
23+
D2PAK
8357
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
詢(xún)價(jià)
INFINEON
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
詢(xún)價(jià)
更多IRF3710ZSTRLPBF供應(yīng)商 更新時(shí)間2024-12-23 19:20:00