首頁(yè) >IRF2807STRLPBF>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRF2807STRLPBF | Advanced Process Technology | IRF International Rectifier | IRF | |
AdvancedProcessTechnology Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRF International Rectifier | IRF | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
AUTOMOTIVEMOSFETAdvancedProcessTechnology Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
AUTOMOTIVEMOSFETAdvancedProcessTechnology Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRF International Rectifier | IRF | ||
AUTOMOTIVEMOSFET(75V,94mOHM,75A) Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescomb | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
AUTOMOTIVEMOSFET(75V,94mOHM,75A) Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescomb | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
AUTOMOTIVEMOSFETAdvancedProcessTechnology Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
AdvancedProcessTechnology Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRF International Rectifier | IRF | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
AUTOMOTIVEMOSFET(75V,94mOHM,75A) Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescomb | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF |
詳細(xì)參數(shù)
- 型號(hào):
IRF2807STRLPBF
- 功能描述:
MOSFET MOSFT 75V 82A 13mOhm 106.7nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
2020+ |
TO-263 |
22000 |
全新原裝正品 現(xiàn)貨庫(kù)存 價(jià)格優(yōu)勢(shì) |
詢(xún)價(jià) | ||
Infineon Technologies |
24+ |
D2PAK |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢(xún)價(jià) | ||
IR |
24+ |
N/A |
5000 |
全新進(jìn)口原裝現(xiàn)貨,價(jià)優(yōu) |
詢(xún)價(jià) | ||
IR |
16+ |
TO-263 |
6198 |
全新原裝/深圳現(xiàn)貨庫(kù)2 |
詢(xún)價(jià) | ||
IR |
24+ |
TO-263 |
65200 |
一級(jí)代理/全新現(xiàn)貨/長(zhǎng)期供應(yīng)! |
詢(xún)價(jià) | ||
INFINEON/英飛凌 |
21+ |
TO-263 |
36800 |
進(jìn)口原裝現(xiàn)貨 假一賠十 |
詢(xún)價(jià) | ||
INFINEON/英飛凌 |
20+ |
TO-263 |
4000 |
進(jìn)口原裝支持含稅 |
詢(xún)價(jià) | ||
INFINEON |
21+ |
TO-263 |
10000 |
全新原裝公司現(xiàn)貨
|
詢(xún)價(jià) | ||
INFINEON |
21+ |
TO-263 |
10000 |
十年信譽(yù),只做原裝,有掛就有現(xiàn)貨! |
詢(xún)價(jià) | ||
INFINEON/英飛凌 |
24+ |
TO-263 |
4800 |
只做原廠渠道 可追溯貨源 |
詢(xún)價(jià) |
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