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IRC634

Power MOSFET(Vdss=250V, Rds(on)=0.45ohm, Id=8.1A)

HEXFETPowerMOSFET

IRF

International Rectifier

IRC634PRF

HEXFET Power MOSFET

IRF

International Rectifier

IRF634

PowerMOSFET(Vdss=250V,Rds(on)=0.45ohm,Id=8.1A)

Description ThirdInternationalRectifierfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?FastSwitching ?EaseofParalleli

IRF

International Rectifier

IRF634

N-CHANNEL250V-0.38ohm-8ATO-220/TO-220FPMESHOVERLAY??MOSFET

Description UsingthelatesthighvoltageMESHOVERLAY?process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformance.ThenewpatentedSTriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,makesitsuitableincovertersforli

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

IRF634

AdvancedPowerMOSFET

FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=250V ?LowerRDS(ON):0.327?(Typ.)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF634

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半導體

IRF634

N-channelmosfettransistor

Features ?WithTO-220package ?Simpledriverequirements ?Fastswitching ?VDSS=250V;RDS(ON)≤0.45Ω;ID=8.1A ?1.gate2.drain3.source

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF634

N-channel250V-0.38廓-8ATO-220/TO-220FPMeshOverlay??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

IRF634

N-ChannelMOSFETTransistor

DESCRIPTION ?DrainCurrent-ID=8.1A@TC=25°C ?DrainSourceVoltage- :VDSS=250V(Min) ?StaticDrain-SourceOn-Resistance :RDS(OD=0.45Ω(Max) ?FastSwitchingSpeed ?LowDriveRequirement APPLICATIONS ?Highcurrent,highspeedswitching ?Switchmodepowersupplies ?DC-DCconv

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

IRF634

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

詳細參數(shù)

  • 型號：

    IRC634

  • 功能描述：

    MOSFET N-Chan 250V 8.1 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IR
24+
TO-2205-Pin(HEXSen
8866
詢價
IR
23+
TO-2205-Pin(
8600
全新原裝現(xiàn)貨
 詢價
ir
24+
N/A
6980
原裝現(xiàn)貨,可開13%稅票
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
23+
TO-220-5
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
IOR
21+
TO220
12588
原裝正品,自己庫存 假一罰十
 詢價
IR
23+
TO-220-5L
65480
詢價
IR
24+
TO-220-5
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
IR
23+
TO-220-5
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
IR
21+
TO-220
10000
原裝現(xiàn)貨假一罰十
 詢價
更多IRC634供應商 更新時間2025-2-22 16:30:00

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