IRF1010N中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF1010N規(guī)格書詳情
VDSS = 55V
RDS(on) = 11m?
ID = 85A?
Description
Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
產(chǎn)品屬性
- 型號：
IRF1010N
- 功能描述：
MOSFET MOSFET, 55V, 72A, 11 mOhm, 80 nC Qg, TO-220AB
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-220 |
12000 |
全新原裝假一賠十 |
詢價 | ||
IR |
2020+ |
D2PAK |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
IR |
24+ |
TO-220AB |
16800 |
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!? |
詢價 | ||
IR |
23+ |
NA/ |
368 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
IR |
24+ |
TO220 |
990000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
IR |
13+ |
TO-220 |
25 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
Infineon/英飛凌 |
24+ |
D2PAK |
25000 |
原裝正品,假一賠十! |
詢價 | ||
BB |
23+ |
8MSOP |
8931 |
詢價 | |||
IR |
24+ |
TO-263 |
501249 |
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
詢價 | ||
InternationalRectifierIR |
23+ |
NA |
654 |
專做原裝正品,假一罰百! |
詢價 |
