IRF1010N中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF1010N規(guī)格書詳情
VDSS = 55V
RDS(on) = 11m?
ID = 85A?
Description
Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
產(chǎn)品屬性
- 型號：
IRF1010N
- 功能描述：
MOSFET MOSFET, 55V, 72A, 11 mOhm, 80 nC Qg, TO-220AB
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-263 |
501249 |
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
詢價 | ||
IR |
24+ |
TO-220 |
6430 |
原裝現(xiàn)貨/歡迎來電咨詢 |
詢價 | ||
IR |
24+ |
原廠封裝 |
5000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
2231+ |
TO-220 |
14263 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
IR |
23+ |
TO-220 |
10000 |
原裝正品現(xiàn)貨 |
詢價 | ||
IR |
21+ |
TO-263 |
5587 |
原裝現(xiàn)貨庫存 |
詢價 | ||
INFINE0N |
21+ |
D2PAK (TO-263) |
32568 |
100%進口原裝!長期供應!絕對優(yōu)勢價格(誠信經(jīng)營 |
詢價 | ||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
IR |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
IR |
418H |
98 |
公司優(yōu)勢庫存 熱賣中! |
詢價 |
