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IRF1010NPBF規(guī)格書(shū)詳情
Description
Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
產(chǎn)品屬性
- 型號(hào)：
IRF1010NPBF
- 功能描述：
MOSFET MOSFT 55V 72A 11mOhm 80nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
Infineon(英飛凌) |
23+ |
TO-220 |
7828 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。 |
詢價(jià) | ||
IR |
24+ |
TO-220 |
151 |
只做原廠渠道 可追溯貨源 |
詢價(jià) | ||
HYP(鴻源精密) |
24+ |
SMD |
10 |
C32-端子 |
詢價(jià) | ||
INFINEON |
23+ |
TO-220 |
10000 |
原裝正品現(xiàn)貨 |
詢價(jià) | ||
IR |
24+ |
原廠封裝 |
25000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
IR |
TO-220AB |
6000 |
一級(jí)代理/分銷(xiāo)渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢價(jià) | |||
IR |
1948+ |
TO220 |
6852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價(jià) | ||
IR |
2024+ |
N/A |
70000 |
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢價(jià) | ||
IR/INFINEON |
19+ |
TO-220 |
300 |
一級(jí)代理,專注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
Infineon Technologies |
24+ |
原裝 |
5000 |
原裝正品,提供BOM配單服務(wù) |
詢價(jià) |
